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In this paper, the effect of passivation layer on thermal resistance of AlGaN/GaN HEMT devices is investigated. In AlGaN/GaN HEMT devices, it is investigated that how this passivation layer influences the heating manner of the device. The total thermal resistance including passivation layer thermal resistance is calculated. The effect of self-heating on current-voltage qualification of AlGaN/GaN HEMT...
The ballistic transport has been extensively discussed for years in search for enhancement of device and circuit performance. The device performance is expected to improve as channel length is reduced below the scattering-limited mean free path (mfp). However, several experimental observations [1–3] reveal that the mobility degrades when the channel length decreases below the long-channel mean free...
Energy harvesting is a promising technique that can be used to drive various sorts of passively powered devices [1]. Viable energy sources include wind, sunlight, thermal energy, radio waves, mechanical vibration and so on. As an energy source existing ubiquitously in our environment, radio frequency (RF) energy harvesting has the potential to be widely applied. In this work, an RF energy harvesting...
Graphene is regarded as a promising material that could be the basis for future generations of low-power, faster, and smaller electronics [1,2]. Currently, chemical vapor deposition (CVD) growth method is the only way that can produce large area monolayer graphene up to tens of inches with high quality [3,4], which makes it the most promising graphene producing method for large scale device applications...
Resistive memory is being considered for next-generation non-volatile memory due to the inherent simplicity, scalability and low cost [1, 2]. Additionally, these devices show potential to replace static random access memory (SRAM) as high performance switches for reconfigurable devices [3, 4]. These devices operate by changing resistance from high (Roff) to low (Ron) values in response to applied...
The advancement of silicon-based transistor's fT and fMAX have ushered in a new contender in the area of millimeter-wave integrated circuit technology [1], [2]. Silicon's greatest advantage over III-V based technologies, to integrate both digital and RF functions onto a single chip, has been demonstrated successfully across the millimeter-wave spectrum [3]–[5]. However, one of silicon's greatest weaknesses,...
Germanium-tin alloys are attracting renewed interest for applications including the strain control of CMOS active channels in integrated circuits, and mid-infrared optical devices for medical imaging, chemical spectroscopy, and military counter-measures. With sufficient Sn content above about 10 %, there is the particularly interesting possibility of an energy bandgap that is direct in reciprocal...
High-density memristor arrays are integrated on complementary metal-oxide-semiconductor (CMOS) substrates for neuromorphic circuit architectures. Advancing previously-reported work on Ag-filament memristor arrays [1], memristor operation is shown both in conjunction with CMOS multiplexer (MUX) circuits and in a “direct-access” configuration in which cross-bars are directly connected via CMOS interconnects...
There is a need for high power, high current, high speed photodetectors, for efficient, high gain RF photonic links, which can operate with 1–5W RF power in the DC to 20 GHz range. This need is currently being met by state-of-art InGaAs photodetectors [1], but there are several material-dependent limitations. It is well known that InGaAs is a very poor thermal conductor. As observed in Fig. 1, based...
A study of the conductivity type of undoped high quality ZnO thin-films grown on (100) Si substrates by pulsed laser deposition (PLD), is reported. Two groups of samples were prepared at a wide range of growth temperatures between 150 and 350 °C and oxygen overpressure of 5.5×10−6 Torr (low oxygen pressure regime) for one group and 2.5×10−4 Torr (high oxygen pressure regime) for the other group. The...
We report on the 172/180 GHz (fT/fmax) E-mode InAlN/AlN/GaN HEMTs with a recess-etched gate footprint of 33 nm. To develop further scaling strategies [1], comparative studies were carried out on E- and D-mode HEMTs with fT near 200 GHz at both room (RT) and cryogenic temperatures (LT). Delay component analysis indicates that the speed of the E-mode device is dominated by parasitic delays, and that...
The talk reviews new approaches to fabricating high-speed high-power electronic devices with frequency configurable elements. Such elements behave as conductors at low frequencies and as insulators at high frequencies. Frequency dependent impedance allwos independently tune the DC, microwave or pulse device performance. We illustrate the frequency-configurable electrode techniques using its application...
III-V nitrides have attracted intense interest recently for applications in high-temperature, high-power electronic devices operating at microwave frequencies. Gallium Nitride (GaN), with a much larger band gap than Gallium Arsenide, has drawn recent interest in industry for use in blue laser diodes and microwave power field-effect transistors. Even though GaN has three times higher effective electron...
High voltage (600 V and above) Insulated Gate Bipolar Transistors (IGBTs) are among the most commonly used power switching devices for a wide range of industrial applications. The recently developed Trench-Gated IGBT (TIGBT) is a three-terminal device of great complexity, consisting of a MOSFET and a BJT in tandem [1]. In this work, a terminal capacitance model of the TIGBT is constructed by combining...
Large area graphene [1–3] is an emerging material and prime candidate for future high frequency electronics. In this work, large-area CVD graphene based radio-frequency transistors are integrated on both rigid and mechanically flexible/conformable substrates. The devices incorporate scaled ALD gate-dielectrics and the layout is tailor designed to minimize parasitics producing improved extrinsic >3...
Moving to a three dimensional architecture, such as finFETs (field effect transistor), tri-gate FETS or nanowires, will allow semiconductor devices to scale for a few more nodes. Using the third dimension, these devices offer the same surface area but take up less space on the wafer, at the cost of a possible increase in sensitivity to non-idealities. Smaller devices are likely to be more sensitive...
In order to suppress short channel effects as gate length of field effect transistors (FETs) continues to downscale, multi-gate FETs and nanowire FETs (NW-FETs) are poised to replace traditional planar devices. Top-down defined NW-FETs are susceptible to etching damages and the size of which is limited by lithography. Bottom-up self-assembled III-V NWs are particularly interesting because of the simplicity...
In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.
Recently, photo conductive properties of Graphene have been explored theoretically in [1] and experimentally in [2, 3]. In this paper we propose to build an optical bio sensor using Graphene Nano Ribbon (GNR). It is known that the band gap of GNR is controlled by the width of ribbon. The relation between the band gap and the width of the GNR is given by equation (1).
Tunneling SRAM (TSRAM) based on the resonant tunneling diodes (RTD's) [1] potentially offers seven orders of magnitude lower standby power and four times higher integration density compared to conventional CMOS SRAM and has enormous potential for post-CMOS scaled circuits [2], [3]. TSRAM has not yet been realized with a useful bit capacity mainly because the level of uniformity required of the nanoscale...
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