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A simplified technique and analytical expression is proposed to generate layout-efficient coplanar circular spiral inductors and to accurately predict their length, and hence performance, in multilayer multichip module technology. Using the new layout generation technique and developed closed-form expression, circular spiral inductors are designed and modelled with remarkably high performance and...
The injection-locked behaviour of a high efficiency pulsed waveform oscillator is analyzed in detail. The design is based on a closed-loop configuration, loaded with a short nonlinear transmission line (NLTL). A new technique is provided to predict the effect of the circuit elements on the synchronization bandwidth, which enables an overall optimization of the oscillator design, considering efficiency,...
In electrostatic capacitive MEMS switches, stiction can be caused by two main mechanisms: dielectric charging and meniscus formation resulting from the adsorbed water film between the switch suspended electrode and the dielectric film. In this study, for the first time the influence of each mechanism and the interaction between both mechanisms were investigated by measuring the adhesive force under...
A novel compact electrical tunable microstrip band pass filter, realized by coupling two Hairpin-DGS resonators, is proposed. The tunability is achieved by embedding varactor diodes to the Hairpin-DGS resonators. The measured relative tuning range of the band pass filter is 23.5% with a fractional bandwidth of 8%. The measured insertion loss is 3.6 dB to 2.1 dB within the tuning range. The simulated...
In this paper, a new type of GaN HEMT power amplifier (PA) using dual band-notched UWB (Ultra Wideband) bandpass filter which is proposed to control harmonic components at 2.14 GHz is designed and tested. The dual band-notched UWB bandpass filter is constructed by three hairpin fingers and two pairs of folded fingers added on both side extremities, so that it can suppress 6.42 GHz and 10.7 GHz by...
This paper presents a hybrid (passive & active) power amplifier concept for a wideband high drain efficiency power amplifier design. The proposed design integrates for the first time a dual-band PA with an active second harmonic injection to achieve high efficiency across a continuous wideband frequency range of two octaves. The design utilizes a resistively loaded class B at the lower frequencies...
This paper presents RF and Microwave BIST system for reconfigurability of on-chip function blocks. Design of BIST for on-chip functions is demonstrated based on design of scalable LNA gain (with digitally controlled attenuators), programmable automatic oscillation amplitude control of PLL reference VCOs and dynamic EVM estimation of IQ systems. In all aforementioned applications impacts of BIST circuits...
A novel adaptive slow-wave mode-coupling technique is incorporated in synthesizer with the intent of lowering size, cost, power-consumption, phase noise, and vibration sensitivity for current and later generation communication systems.
System-level inter-Chip and intra-Chip interferences analysis and characterization is proposed. Inter-Chip noise interferences as function of wireless coupling-path attributes (wireless separation distance between emitter and receiver chips, injected power levels, Charge-Pump-Current) are characterized. At Intra-Chip level, influence of VCO-PLL inductance architecture (8-shaped topology versus O-shaped...
90 nm Si-CMOS high power handling Transmit/Receive (T/R) Switch is proposed for 60 GHz wireless applications. By adopting series and shunt FETs circuit configuration and by employing large FET gate width of 320 μm, high transmit power handling capability is achieved. Since the use of large FET gate width degrades the insertion loss and isolation in the receive mode, a microstrip line is connected...
An 8–10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be compatible with more than one type of direct digital synthesizer...
This paper presents a novel tunable coplanar waveguide bottom-side meander line bandstop resonator filter. The proposed topology consists of modifying the electrical length of the meander line by tuning loaded varactors. As the reverse bias voltage is changed from 0 to 20 V, the resonance frequency is tuned from 0.51 GHz to 1.76 GHz, resulting in a very high tuning of 245%. Additionally, the proposed...
Solid state amplifiers are often fitted with an isolator component on the output to protect them from impedance mismatch. GaN based HFET's could offer the potential to remove the isolator due to their high breakdown voltages and high channel temperature operation. However the absence of an isolator would mean that the transistor would have to be able to withstand any load impedance that could be presented...
This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in 0.25-μm SiGe BiCMOS process for X-Band (8–12 GHz) phased array radar applications. The switch is based on series-shunt topology with combination of techniques to improve insertion loss (IL), isolation and power handling capability (P1dB). These techniques include optimization of transistor widths for...
In this paper, design and analysis of two modified Colpitts voltage-controlled oscillators (VCOs) with or without transformer feedback are presented. The loaded quality factors of these two VCOs are analyzed, and the result is the use of transformer feedback in the Colpitts oscillator decreases the loaded quality factor. Two K-band VCOs with and without transformer feedback using 0.5-μm GaAs enhancement/depletion...
This paper presents a power amplifier (PA) cascade model, using two polynomial functions for amplitude and phase variations and multiple delay taps. This model allows an accurate modeling of the output envelope distortion and spectral asymmetries. To extract the model coefficients and delays for each non linearity order, an analytical method is developed. This method uses the Fourier transform of...
A reliable low actuation voltage RF-MEMS switch is fabricated following a very simple design technique. Using well-known electrostatic RF-MEMS equations, it is experimentally demonstrated that both low actuation voltage and high reliability RF-MEMS switches can be easily achieved. As an example, a 6.8V switch is fabricated and tested. The measured on/off capacitive ratio on this component is 5.2....
In this paper, we reported evaluation results of our L/S-band GaN HEMT, especially focusing on ruggedness and reliability. In terms of ruggedness, we demonstrated GaN HEMT had 3-terminal breakdown voltage of 250 V and sufficiently wide area of safe operation (ASO) at 200 degC. Simulated peak drain-source voltage of an inverse class-F operation reached 160 V, and 3-terminal breakdown voltage was good...
A novel mm-wave MEMS phase shifter based on a slow wave structure is introduced. The phase shifter uses co-planer wave guide that has the signal line loaded with inductors through capacitive coupling. The inductor and the capacitive coupling capacitor are designed to work for the mm-wave frequency range. Integrated metal to metal RF MEMS switches are designed such that inductors can be shortened to...
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