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This paper presents an integrated harmonic transmitter front-end for a single-chip 122 GHz FMCW/CW radar sensor. It consists of two building blocks, a frequency doubler and a two-directional power detector. The frequency doubler employs a push-push frequency doubling core and a common-base stage. It exhibits a 2.5 dB conversion gain and a 5 dBm output power. The two-directional power detector is used...
A new MOS varactor bank is proposed to implement a 2.45 Ghz SiGe BiCMOS LC-tank voltage controlled oscillator (VCO) with linear frequency tuning. Compared to a conventional VCO, the proposed technique improves the quality factor of the LC-tank while preserving the linearity of the circuit. Realized in 0.25-nm SiGe BiCMOS technology, VCO exhibits 35% VCO gain (KVCO) variation from 2.29 to 2.66 Ghz...
A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of lumped elements. The topology of these networks is determined such that a scalable set of parameters is obtained. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted...
Modern backhaul digital radios require sophisticated output power control to handle 4G phone data load. This paper describes a family of monolithic power detectors with integrated directional couplers, featuring low insertion loss, high directivity and temperature compensation. Four detectors cover the 2–50 GHz frequency range. Each detector is a single chip housed in a 1.2 × 1.5 mm surface mount...
New zero-bias Schottky diodes with low junction capacitance and low differential resistance are characterized by applying DC and S-parameter measurements from 65–110 GHz. Diode versions with short and open circuits at the diode's anode as well as biased measurements of the diode allow an advanced investigation to model the diode's equivalent circuit. The extracted parameters provide an accurate RF...
In this paper, an original calibration procedure on wafer is described for Non Linear Vector Network Analyzer. The calibration is performed using the NVNA software on frequency domain up to 50 GHz. To validate the performances, measurements will be compared with LSNA on ST microelectronics HBT SiGe.
The paper presents a transceiver front-end MMIC intended for the operation in the license free ISM band from 24 GHz to 24.25 GHz and in the UWB band around 24GHz. The radar principle is FMCW. The chip comprises a low-noise-amplifier (LNA) with gain control, quadrature mixers, polyphase filter, Voltage Controlled Oscillator, frequency measurement unit and digital ramp generation unit with internal...
This paper describes the design, integration and test of a broadband SP16T switching network based on commercially available RF-MEMS SPDT switches. The switching network has been developed to replace an existing network based on semiconductor technology in an automated measurement setup for multifeed X-band and Ka-band satellite communication (SatCom) antennas. A high isolation to insertion loss ratio...
A tunable 9.6 GHz to 11.7 GHz bandstop filter is presented. Tuning is done using RF-MEMS structures with analogical capacitance variation, from 25 fF to 225 fF [1]. The filter is a 2 pole design, based on ring resonators coupled on a 50 Ohms micro-strip transmission line. A half-wave line is arranged between the two resonators, to optimize microwave performances with a zero reflection mode, and minimizes...
In this work, we study for the first time the nonlinearity of AlN piezoelectric material subjected to high RF electric field (E). Nonlinear effects in BAW (Bulk Acoustic Wave) resonators are seen as a frequency shift and an amplitude variation at the resonance (fr) and anti-resonance (fa) frequencies. Moreover the coupling factor increases for high power measurements (high E). By model fittings, these...
In this paper a new GaAs Multi-Chip MMIC C-Band Variable Gain Amplifier (VGA) is presented for point to point wireless communications systems. The VGA is composed of three dies: the first is an input stage amplifier, the second is a variable voltage controlled attenuator (VVA), and the last is an output stage amplifier. In order to achieve high linearity, low distortion, and broad bandwidth, parallel...
This paper summarizes recently-achieved results for a frequency mixer and multiplier at Sub-mm-wavelengths, using a new-developed fabrication technology for Schottky-based Structures. Achieved results represent European state-of-the-art performance at these frequencies. Evaluation results suggest the suitability of the developed technology for applications at frequencies up to 1THz and beyond.
The nonlinear distortion in supply modulated amplifiers is thoroughly characterized in this paper. An LSNA with a low frequency test set extension is used to simultaneously measure the spectrum around DC and around the RF carrier. The characterization allows for classification of the nonlinear distortion and to determine the relative influence of different paths. The best linear approximation is measured...
This paper presents a high linearity reconfigurable ultra-wideband (UWB) filter. The proposed structure is able to achieve high performance with good linearity and no significant loss. A single PIN diode (BAP65–02) is used to switch the filter from a bandpass to a bandstop response at the same UWB spectrum. An optical switch, comprised of a silicon dice activated using near infrared light is also...
Two architectures of 77-GHz fractional-N phase-locked loops (PLLs) for FMCW radars are presented. Both architectures show good performance in terms of phase noise with −79 dBc/Hz at 100 kHz offset frequency. To achieve this, the integration of a delay-locked loop-based frequency multiplier for the reference signal in the PLL is proposed. It exhibits very low phase noise and proves to be an excellent...
This paper presents a refined modulated waveform measurement system for the robust characterization of nonlinear microwave devices when driven by broadband multi-tone stimuli. This enhanced system has the ability to present specific, constant impedances, not only to a large number of baseband (IF) components, but also to signals located around the carrier and significant harmonic frequencies. Achieving...
In this paper we present the analysis of GaN HEMT power cells for broadband high-power amplifier design. We compare different power cell layouts, different Al contents in the barrier layer, and different fieldplate configurations. With the results of the analysis we can specifically optimize the epitaxial choice, fieldplate configuration, and the layout of the power cell for broadband high-power amplifiers...
The 26–36 GHz receiver for a radio astronomy radiometer, to characterize the polarization of the Cosmic Microwave Background, is presented. This receiver is based on very low noise cryogenically cooled amplifiers in the front-end module, while in the back-end module a broadband amplification and direct detection chain is operated at room temperature. Noise temperature of the low-noise amplifier (LNA)...
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