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In the paper, we propose a fully-differential current-reuse LNA with gm-boosting technique in CMOS 180 nm technology. Two amplification stages are connected in cascaded and share the same DC current. The first stage is a common-gate (CG) configuration for input and noise matching and the second stage is a common-source (CS) configuration for providing appropriate gain. Furthermore, the LNA combines...
We propose an overview of our works on graphene field effect transistors (GFETs) on silicon carbide (SiC) substrate. The multilayer graphene was synthesized by thermal decomposition of Si-face silicon carbide (SiC). The GFET was fabricated, based on an array of parallel graphene nano ribbons (GNRs). The impact of the number of graphene layers on device performance was explored. It was found that with...
Ferromagnetic thin film materials with high permeability in the RF range are potential material for inductive passive components to endure “More-than-Moore” approach. This paper reviews state-of-the-art of ferromagnetic thin films and their applications for integrated inductors and electromagnetic noise suppressor. An innovative challenge to suppress skin effect in RF on-chip conductors is demonstrated,...
This paper presents the design concept and experimental evaluation of a Doherty Power Amplifier for WiMAX applications at 3.5 GHz. The amplifier, exploiting a packaged GaN HEMT from Cree Inc., shows a saturated output power exceeding 43.5 dBm (22 W), a Doherty high efficiency region of 7 dB, with a first peak efficiency of 57% and maximum drain efficiency of 65 % at the amplifier saturation. The amplifier...
The impact of uniaxial strain on flicker noise and random telegraph noise (RTN) was investigated in frequency and time domains, respectively. Both control and SiC strained nMOS reveal flicker noise dominated by number fluctuation model but the latter one with uniaxial strain suffers significantly higher noise. RTN measured from SiC strained nMOS features a complex spectrum with multi-level drain current...
Novel via-less multilayer coplanar waveguide (CPW) to thin-film microstrip (TFMS) transitions are presented using electromagnetic simulations and experimental measurements. The proposed transition design demonstrates a maximum insertion loss of 1dB over the frequency range from 8 to 42 GHz and a return loss which is lower than 18dB from 19 to 71 GHz. A variety of applications of the transition could...
A four channel 60 GHz beamforming transmitter based on an RF phase shifting architecture is developed fabricated in a SiGe BiCMOS process. The transmitter includes an integrated 48 GHz frequency synthesizer, an up-conversion mixer, and a fully differential millimeter-wave power division and distribution network. Each channel consists of a 2 bit digitally controlled phase shifter and a high power amplifier...
A new nonlinear FET model formulation is proposed which comprises an X-parameter (S-function or Poly Harmonic Distortion) intrinsic model combined with lumped extrinsic circuit model shells This enables the correct gate width scaling of the intrinsic and extrinsic model by finger number and unit gate width. An extraction technique is described based on de-embedding the X-parameters to the intrinsic...
GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors...
This paper presents a method for synthesizing the package of power GaN transistors in order to achieve wideband matching at harmonics. The proposed method is applied to optimize the package of a 15W power GaN HEMT for high efficiency performance over 39% bandwidth (S-band). It is demonstrated that the internal pre-matching of package ensures that the impedance seen by the GaN die at the second-harmonic...
This paper studies the impact of using a non-50-% duty cycle square-wave as an input signal, on the efficiency performance of different types of switching-mode power amplifiers (SMPAs). This investigation is important when the power amplifier (PA) is fed with bi-level pulses with a duty cycle different from the typical value of 50 %. This is the case in bandpass delta-sigma (BPDS) modulation where...
The Volterra series is a well-established technique for modeling nonlinear dynamic system. Their wide adoption in predicting the behavior of Radio Frequency Power Amplifiers has been significantly hindered by the large number of coefficients involved especially when they exhibit high order of nonlinearity and strong memory effects. In this paper, we present a new pruning approach based on Wiener G-functionals...
A very compact, highly efficient, 65W wideband GaN class-E power amplifier is presented. Optimum class-E loading conditions are achieved over a broad frequency range using a wideband design and implementation approach. Both input and output matching networks are implemented with bondwire inductors and MOS/MIM capacitors. The resulting amplifier operates from 1.7 to 2.3GHz with a power gain of 12.3±0...
The external modulation, in the optical links, allows us to transmit a great quantity of digital data. With the spectral efficient given by the 16-QAM modulation and the OFDM, near 1 Gb/s transmission link is possible to get in UWB (Ultra-Wide Band). The direct modulation laser seems to be preferred for the radio over fibre (RoF) home and radar applications, due to its simplicity, but the limit in...
In the higher frequency bands of the point-to-point communication systems, it is difficult to achieve a Low Noise Variable Gain Amplifier with high dynamic range along with good linearity and low noise figure. This paper describes a solution that covers the 38GHz band in low cost SMT package in the form of a complete Down-Converter MMIC. The MMIC comprises of a Low Noise Variable Gain Amplifier (LNVGA),...
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