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The lossy cable in a conventional load-pull setup was replaced with an active fixture to realize full tuning range by using passive electromechanical tuners. The approach was validated in small-signal characterization of a through line up to the edge of the Smith chart, as well as large-signal characterization of a heterojunction bipolar transistor up to a voltage standing-wave ratio of 10:1. The...
This work presents an experimental study of the low-frequency dispersion which impairs the performance of microwave active solid state devices. By exploiting low-frequency large-signal excitations (< 10 MHz), the dynamic behaviour of the drain-source current generator is highlighted as function of the operating bias condition and frequency. In order to assess the capability of the proposed investigation...
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This nonlinear, process-oriented, model accounts for avalanche breakdown, hot carriers and process variations, and accurately predicts DC and microwave characteristics. The model has been applied to the optimization of LDMOS structures and shows good agreement over a wide range of structural variations....
This paper reports on DC and RF performances of an In0.15Al0.85N/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate with a 75-nm-T-shaped-gate. A maximum DC current density of 1.27 A/mm and a peak extrinsic and intrinsic transconductances of 452 mS/mm and 680 mS/mm respectively are obtained. The device exhibits a current gain cutoff frequency (FT) and a power gain cutoff frequency...
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