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This paper presents a silicon platform with Through-silicon vias (TSV) interconnects for Radio-Frequency applications, implemented in a via-last integration scheme. As it is aimed at transmitting a wide range of signals, it is mandatory to accurately evaluate frequency dependent loss of TSV. To achieve attractive RF performances, the silicon platform is carried out on High-Resistivity (HR) substrates...
This paper describes how to characterize the pad structure embedding silicon devices directly in terms of scattering parameters. The new procedure accounts for distributed effects associated with the structure itself (e.g. the so-called dangling source leg effect) and other coupling effects. The proposed approach is key to extending device characterization into the mm-wave range. The procedure makes...
A novel 77-GHz directional folded dipole antenna integrated in an embedded wafer level ball grid array (eWLB) package is presented. For the characterization of the antenna a frequency multiplier is embedded, which scales the 4.25-GHz input signal up to 76.5 GHz and allows the use of a commercial signal source. The antenna structure is manufactured at the metallic layer, in the fan-out area of the...
This paper presents electrical characterization of millimeter wave interconnects on oxides to realize routing layers and through-Silicon-Vias interconnections in 3D silicon interposers. As a compromise has to be found between good RF performances and temperature compliant with 3D integration technology, a wide variety of oxide insulators are tested using coplanar waveguide transmission lines. Effects...
A novel MEMS antenna is introduced in this paper. This antenna is capable of operating at both 60 GHz and 77 GHz. The proposed antenna enjoys good isolation from the driving circuit, low fabrication cost, and high mechanical stability. These features are achieved together via a new fabrication technology that allows the realization of MEMS antennas with ground plane isolation from the driving circuits...
A novel RF duplexer with balanced receiving output ports and low temperature coefficient of frequency (TCF) is proposed. The topology of balanced receiving RF filter is designed with both lattice and ladder type. RF resonators in this filter are designed based on a bulk acoustic wave (BAW) structure in which each layer has alternative negative and positive TCF values. The RF circuit block performing...
In this paper the design, fabrication and measurements of a CRLH TL CPW zeroth-order resonant antenna on high resistivity silicon substrate for millimeter wave frequency range (28 GHz) are presented. Experimental results show RL < −20 dB / 28 GHz, the −3 dB beamwidth of the radiation lobe of approx. 37–38 deg. and the gain 2.99 dBi / 28.6 GHz for two antenna structures processed in the same technological...
In this paper, a monolithic fabrication process for implementing a sensor device consisting of a ring resonator and dielectric image-waveguide on Silicon-on-Insulator (SOI) is presented for sensing applications. The device is implemented on high resistive silicon with the resistivity greater than 1000 il-cm to minimize the dielectric loss. The set of ring resonator and dielectric waveguide are optimized...
A novel bondwire-transformer for high-power RF applications is presented. The proposed structure uses several bondwires in parallel, which enables ultra-low losses and high magnetic coupling. A prototype of this proposed transformer has been implemented and evaluated by full-wave electromagnetic simulations and RF measurements. Its main electrical parameters and efficiency figures of merit are considered...
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