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An analysis of a GaAs/AlGaAs electrooptic intensity modulator is carried out by using the finite element method. The microwave properties, e.g., the effective index, the characteristic impedance, and the frequency dependent attenuations are calculated using quasi-TEM analysis. The 3-dB optical bandwidth is estimated and it is shown that microwave losses in the dielectric material is an important factor...
This paper describes the effects of cap layer on sheet carrier concentration and mobility of two dimensional electron gases (2DEGs) in InN-based InN/InGa(Al)N/InN heterostructures. Addition of a InN cap layer in InGa(Al)N/InN heterostructure leads to a very interesting dependence of 2DEGs. The sheet carrier concentration decreases and mobility increases with increase of the InN cap layer thickness...
GaN based devices show great potential for high power, high frequency and extreme-environment applications. Due to spontaneous and piezoelectric polarization properties, these devices are also suitable for pressure monitoring or detection of biomolecules causing surface stress. Therefore, GaN based monolithic sensor system can be applied for the detection of biomolecules or pressure imaging for biomedical...
This paper demonstrates a novel way of using a single type of high electron mobility transistor (HEMT) device for detecting two kinds of biomolecules (Photosystem I and recombinant human monokine induced by interferon gamma, MIG). MIG was successfully detected in 150 mM concentration of phosphate buffer solution (PBS). Floating gate configuration used for biomolecule detection eliminates the need...
This paper describes a novel AlInN/InN heterojunction field effect transistor (HFET) without and with an oxide layer for high performance. A charge control model based on the self-consistent solution of one dimensional Schrodinger-Poisson equations is developed. The model takes into account the highly dominant spontaneous and piezoelectric polarization effects to predict the two dimensional electron...
This paper reports on the InxGa1-xN-based quantum well (QW) cell as a promising candidate for future high efficiency solar cells. The performances of the proposed quantum well cell are assessed using an analytical model and different device parameters are optimized. A maximum efficiency of 36.49% is obtained with at an optimized band gap of 1.38 eV and at a well depth of 0.2eV. The effects of well...
Ballistic drain current of III-V surface channel MOSFETs has been investigated using over-the-barrier transport model. Inversion biased electrostatic properties are determined by 1D self-consistent solution of Schröndinger's and Poisson's equations. Inversion carrier density (Ninv), injection velocity (Vinj) and drain current (ID) are calculated for different In compositions in the channel region...
This paper presents simulation of GaN high electron mobility transistor (HEMT) based device structures for the detection of toxic and hazardous gases like carbon monoxide (CO) and hydrogen (H2), respectively. AlGaN/GaN heterostructures show large potential as sensors due to the presence of 2-dimensional electron gas (2-DEG) at the heterointerface. Due to widebandgap material properties, GaN based...
This paper represents a model of zero-bias resistance area product of InGaSb PIN photodiodes grown on InGaSb metamorphic layer through the analysis of surface leakage and bulk current components of these photodiodes. The model is further developed by considering effects of dislocation density in the diodes. Different optoelectronic properties of the material are extracted by fitting the obtained models...
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