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The effect of temperature and scaling of gate length on the threshold voltage of double gate Ge tunneling FET has been studied. The threshold voltage has been determined from transconductance rather than constant current method. In the 10 nm to 50 nm range scaling has almost no effect on threshold voltage. However, threshold voltage is function of temperature in the range of 250-500 K. Besides, a...
We propose a compact model for calculating the quantized energy levels in InGaAs MOSFETs with Al2O3 gate dielectric. The model is based on the modified Airy function approximation, originally developed for Si nano-MOSFETs. The parameters of the model are extracted from numerical results calculated by self-consistent solution of one-dimensional Schrödinger and Poisson equation including the effect...
In our previous work, we proposed a process optimized hollow silicon (Si) microneedle structure on a silicon chip, which had the highest aspect ratio (AR) reported so far. The 150 micrometer (μm) tall optimized microneedle structure with an AR of about 30:1 was fabricated by reactive ion etch or RIE process on a p-type 500 μm thick Si substrate for drug delivery applications. In this paper we have...
In this paper the design, analysis and testing of a cantilever based piezoresistive arsenic sensor has been described. The fabrication on a single crystal silicon substrate utilizes the technologies of anisotropic chemical etching. The arsenic sensor, which is of resistive type, changes its resistance when the sensing cantilever adsorbs arsenic on its surface coated with arsenic adsorbent. Using the...
The effects of phonon scattering on the drain current and performance metrics of a silicon nanowire transistor are studied using a top of the barrier model. When the top of the channel potential is above the source Fermi level, electron backscattering is prohibited by the potential barrier and the transistor operates in near ballistic regime. At higher gate biases, the optical phonon scattering dominates...
A new double gate MOS structure that uses intrinsic Si as the active material is proposed in this paper for photo-voltaic application. In this device recombination of optically generated charge carriers will be low as the active region is intrinsic in nature and the carriers will travel at high velocity under the effect of external electric field. The open circuit voltage (VOC), short circuit current...
The modeling of the growth rate of boron doped silicon micro needle grown at low temperature by vapour-liquid-solid (VLS) mechanism is reported in this paper. Intrinsic silicon micro needle can be doped by conventional diffusion process at 1100°C after VLS growth but in this work in-situ doping is used which requires lower temperature at around 700°C. Experimental data shows that the incorporation...
Carbon thin films were deposited on Silicon (Si) substrates by electrolysis of methanol. The effect of camphor (C10H16O) - a natural source, incorporation in methanol is investigated. Camphor with varying amount (2%, 4%, 6% and 8%) was mixed in methanol solvent to prepare the electrolytes. Silicon substrates were mounted on the negative electrode. Remarkable change in the variation of current density...
A model has been developed for Erbium luminescence in Silicon Rich Oxide (SRO) through sensitization of silicon nanoclusters (si-nc). Energy transfer routes to and from Er atoms in the neighbourhood of nanoclusters are analyzed. The fraction of Er atoms in excited state has been calculated by equating all possible energy transfer mechanisms. Sensitization effect of ncs is found to be efficient at...
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