The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we present an improved charge pump circuit for the non-volatile memories in RFID tags. The circuit consists of a single pumping branch without auxiliary capacitors and operates with a simple two-phase clock. The internal high voltages are used to control the gate and bulk terminals of the charge transfer switch. As a result, the threshold voltage loss and the leakage currents are eliminated...
A novel architecture of the configurable Distributed Random Access Memory (RAM) logic based on Look-Up Tables (LUTs) in the Logic Block (LB) is proposed and implemented in a tile-based FPGA manufactured with a 0.5μm SOI-CMOS logic process. The Distributed RAM can be configured in two modes: Single-Port RAM and Dual-Port RAM. Due to its resource abundance and low latency the Distributed RAM can complement...
Resistive switching characteristics of Ag/SiO2/Pt memory cells with different set current compliance are studied. Ag/SiO2/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<;0.5V), low operation current (~1μA), high resistance ratio (104) and good retention characteristic. Co-existence of bipolar and unipolar...
In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs...
Typical bipolar resistive switching behavior are observed in the In/poly-Fe2O3/Nb-SrTiO3 (Nb-STO) devices. Rectifying I-V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 107 comparing with 102 for the positive polarity, which demonstrates an efficient way to improve...
This work studies the electrical and testing reliability issues of CuxO based RRAM (Resistive Random Access Memory). Firstly, we study the most important electrical reliability issue-data retention capability, and propose a filament/charge trap combined model to clarify the retention failure mechanism. Secondly, we respectively study the reliability problems caused by the SET compliance current in...
Low supply voltage is a commonly method for suppressing system power consumption and thermal effects, improving battery life and chip reliability for mobile SoC and 3D-IC devices. This paper describes various mainstream and emerging embedded non-volatile memory (eNVM) solutions for mobile SoC and 3D-IC designs. This study also reviews and discusses the key circuit technologies for decreasing the VDDmin...
For the integration of high-density ferroelectric random access memories, each memory cell can be formed at the cross point of a plate line and a common node electrode, where the ferroelectric film is continuous between them. However, the peripheral region beyond the cross point of each cell without electrode coverage could also switch under the writing/reading pulse. To avoid this crosstalk problem...
We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming...
In this paper, a preparation process of PCRAM access-diode-array with proprietary intellectual property rights (PIPR) is shown simply. Then, Relationship between device parameters and diode performance, including drive-current, breakdown, especially disturb-current, which influences the data-veracity and reliability of PCRAM, is analyzed from the views of carriers distribution and parasitic PNP-BJT...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
A novel polymer (organic) resistive memory device with the structure of W/parylene+Au/Al is presented in this paper. The organic memory device exhibits not only high scalability but also good compatibility with CMOS back-end process, for parylene is immune to the lithographic solvents. Moreover, parylene film could be fabricated by chemical vapor deposition (CVD) instead of spin-coating, thus the...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
Two types of ReRAM are investigated. The first is a CB-ReRAM (conducting bridge ReRAM) that uses metallic ions to form the bridge. This type of device is known to be unstable because the conducting bridge tends to self-destruct. By adding a buffer layer between the electrode and the electrolyte, the retention of the Cu-based CB-ReRAM is greatly improved while the superior electrical performance is...
The nc-Si nonvolatile memory devices with high performance have been fabricated by using general CMOS techniques. High resolution transmission electronic microscope (HRTEM) shows that the average size of nc-Si is 8 nm and its density is 3×1011/cm2. The performance of programming/ erasing and retention time is mainly depending on the quality and thickness of tunnel layer and control layer. The results...
In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.
1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
Electroless Deposition (ELD) method was developed to fabricate metal nanoplug heater for vertical Phase-Change Random Access Memory (PCRAM) application. We demonstrated a functional vertical PCRAM device with heater diameter size around 9 μm by ELD method without Chemical Mechanical Planarization (CMP) process. It was also demonstrated that even 50 nm and 90 nm metal nanoplug can be easily fabricated...
In this paper, the static and dynamic switching characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) have been examined. Based on the experimental results, several pertinent device characteristics can be developed, which include a tunneling barrier width model to explain the RRAM switching behaviors, and the ac transient switching characteristics for circuit model development. We also...
A comprehensive simulation of PRAM including the electrical transport, thermal diffusion, phase change dynamics and percolation effect is presented. They are fully coupled to each other in order to reflect the fundamental physical process in the programming operation of PRAM cell. By means of the developed simulation method, both programming operations and impacts of thermal boundary resistance (TBR)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.