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A new extraction method for InGaP/GaAs HBTs based on direct optimization is proposed. Through modification of conventional GP formulation, the variations of transport saturation current and ideal forward transit time versus biases are incorporated into the compact model. Rather than intense and complicated iterative optimization, this new parameter extraction methodology realized the united optimization...
Thermal transient measurement of the 808 nm GaAs-Based laser diodes (LDs) before and after the constant current stress are presented and discussed in this paper. Aging tests are carried out under the conditions of the constant current stress (1 A) for 255 hours. The total thermal resistance increases from 7.0 to 8.8°C/W before and after degradation. Furthermore, the contribution of each component...
A systematic computational fluid dynamic (CFD) study was performed to investigate the effects of operating parameters of chamber pressure and wafer carrier rotation rate on the GaAs/AlGaAs deposition rate and uniformity in vertical rotating disc metal organic chemical vapor deposition (MOCVD) reactors. It is shown that significant improvement of the reactors efficiency can be achieved by finding the...
The design highlight of a power amplifier (PA) for 3G and beyond handset applications is to maximize its power-added efficiency (PAE) with specified linearity requirement at both peak and back-off power levels. In addition to PAE, its cost and size are of very important design considerations among others. The design principle of a linear PA with good PAE is summarized. An overview of different GaAs...
Compact frequency doublers for operation in millimeter-wave bands are demonstrated. These frequency doublers adopt two types of slow wave structure in Marchand balun, thereby reducing the chip size. The results demonstrate low conversion loss and good fundamental signal suppression with a wide operation bandwidth. These doublers fabricated by GaAs PHEMT process, with a size dimension of less than...
We report on study of the scattering mechanisms in the system of AlGaAs/GaAs two-dimensional electron gas (2DEG) with nearby embedded GaSb/GaAs type-II quantum dots (QDs), which directly affect its transport properties. Mobilities were measured as functions of electron density N2D in the QDs contained sample and reference sample at 4.2K, respectively. In the framework of Born approximation, a short-range...
In this work we report the main results of a research activity on a novel device concept which aims to achieve a steep switching behavior based on the filtering of high-energy electrons in the FET source region. The filtering function is entrusted to a superlattice in the source extension, which could possibly be fabricated by depositing a number of appropriate semiconductor layers within the manufacturing...
We theoretically investigate the mechanism of the electron rebound from the drain into the channel and its impact on the drain current in the nano-scale InGaAs MOSFETs by using the quantum corrected Monte Carlo (MC) simulation. The electrons almost ballistically transport in the channel at the gate length, Lg, of 10 nm. However the electron rebound becomes pronounced instead when the electrons degenerate...
We would like to report our approaches to realize epitaxially grown source toward high drain current in III-V MISFET. One approach is an InP/InGaAs composite channel MISFET with regrown InGaAs source/drain. When gate length of 150 nm was fabricated, Id at Vd = 0.8 V was 0.8 A/mm and maximum gm was 0.38 S/mm at Vd = 0.5 V. The other approach is vertical FET. In case of vertical FET with dual gate,...
Ultra-high-vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO, low interfacial densities of states (Dit's) ~ 1011eV-1cm-2, and thermal stability at high...
In this paper, a dual mode GaAs HBT power amplifier for LTE band I applications is present. The amplifier is designed to operate from 1.92 GHz to 1.98 GHz with 28 dB of gain, enough to work with transmitter chips with relative low output power. The amplifier deliveries 28 dBm of linear power at 3.4 V supply to satisfy the linearity requirement for the LTE application. To improve the average efficiency...
High-performance implant-free In0.53Ga0.47As-channel MOSFETs grown on GaAs substrates by Metalorganic Chemical Vapor Deposition (MOCVD) are demonstrated. Atomic-layer-deposited (ALD) Al2O3 was used as gate dielectric on top of a δ-doped In0.53Ga0.47As/In0.51Al0.49As metamorphic heterojunction structures grown on GaAs substrates. A 1-μm gate-length MOSFET with 15nm Al2O3 shows a maximum drain current...
This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolation,...
In this paper, we discuss the research and development of several key process modules for realizing high-mobility III-V n-MOSFETs. Interface passivation technologies were developed to realize high quality gate stacks on III-V. InGaAs MOSFETs with in situ doped lattice-mismatched source/drain (S/D) stressors were demonstrated for reduction of S/D series resistance as well as channel strain engineering...
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