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Thermal transient measurement of the 808 nm GaAs-Based laser diodes (LDs) before and after the constant current stress are presented and discussed in this paper. Aging tests are carried out under the conditions of the constant current stress (1 A) for 255 hours. The total thermal resistance increases from 7.0 to 8.8°C/W before and after degradation. Furthermore, the contribution of each component...
The conventional threshold voltage shift measured by extrapolating transfer characteristics, ΔVth(ex), underestimates the NBTI-induced degradation of drain current, ΔId. Mobility degradation, Δμ, has been proposed as a potential contributor to ΔId. Evaluating Δμ, however, can be problematic and controversial. For test engineers, it is desirable to include all degradations in one parameter and we propose...
Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.
Electron and hole mobility in sub-10nm silicon nanowire FETs on (100) SOI has been systematically investigated experimentally. The nanowire height of fabricated nanowire FETs is as low as 4 - 10nm and the minimum nanowire width is shrunk to 5nm. Higher hole mobility than (100) universal mobility is experimentally observed for the first time in 9nm-wide nanowire and even in 5nm-wide nanowire, while...
In this study, we investigated the electrical characteristics of p-channel transistor by changing the process sequence of P+ Source/Drain Ion Implantation (IIP) N2 annealing process in NAND Flash memory. For the case of changing the process sequence of N2 annealing, off-current of p-channel transistor was dropped sharply, and increase of the on current compared to the off current is not worse than...
In this paper, the C-V and I-V characteristics of Si-nanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Si-nanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I-V data free from the effect of the series resistance are obtained and...
Negative bias temperature instability (NBTI) has become one of the major limiters for product lifetime, and various models have been proposed in order to explain NBTI. In this paper, an analytical model for DC NBTI and AC NBTI is proposed. This model describes the different time dependence of DC NBTI degradation at both short- and long-term stresses, and also reproduces the frequency and duty cycle...
In this paper, the influence of the different length of the drift region and the field plate upon Hot-Carrier-Induced on-resistance (Ron) and threshold voltage (Vth) degradation in p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide has been investigated. It was concluded that increasing the length of drift region can reduce the Ron degradation but enhance the Vth degradation...
Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data.
This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET.
A detailed experimental study on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation was conducted. Unlike to the conventional NBTI degradation, the concurrent drain bias stresses exhibit a complex correlative effect in both degradation and recovery stages. Our results show that the degradation of NBTI with drain bias at Vdd becomes the worse reliability corner for pMOSFETs...
Contradiction of threshold voltage shift window and endurance severely restricts the application of silicon nanocrystals (Si-NCs). Pre-cycling with higher program/erase (P/E) voltages greatly improves the endurance performance. Baked at 150°C, decreases of stored charges at programmed states have a similar trend, which proves the optimized method does not bring more traps than normal P/E cycling.
High power Light-emitting Diode (LED) as Solid-state Lighting (SSL) is a promising light source, and one of the crucial factors for its wide acceptance is its reliability. However, humidity reliability study of the high power LED reliability is rare despite that they are also susceptible to high humidity environments in many of their applications. In this work, we present the various humidity reliability...
MOS device aging caused by hot-carrier injection (HCI) and negative/positive bias-temperature instability (N/PBTI) is increasingly more responsible for IC reliability failure for advanced process technology nodes. Accurate aging modeling and fast yet trustable reliability signoff are thus mandatory in process development and circuit design. This paper will first present an aging model that takes into...
This paper presents an experimental study of total ionizing dose (TID) characterization of a CMOS microprocessor, which has been pre-exposed to different level of neutron fluence. The power supply current and output voltage of the IO port and pulse width modulation (PWM) are found to be sensitive in ionizing radiation test. Experimental results show that neutron irradiation affects subsequent TID...
We have proposed atomistic guiding principles for high program/erase (P/E) cycle endurance MONOS type memories based on first principles calculations. We found that excess O atoms near the SiN/SiO2 interfaces are the cause of memory degradation due to an irreversible structural change during P/E cycles. These results indicate that by suppressing excess O atoms the MONOS characteristics can be effectively...
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