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The memory effect in floating nanodot gate field effect transistor (FET) was investigated by fabricating biomineralized inorganic nanodot embedded metal-oxide-semiconductor (MOS) devices. Artificially biomineralized Co oxide cores accommodated in ferritins were utilized as a charge storage node of floating gate memory. Two dimensional array of Co oxide core accommodated ferritin were, after selective...
Quantum-transport simulations of current-voltage characteristics are performed in nanoscale metal-oxide-semiconductor field-effect-transistors. Effects of interface roughness, discrete impurity, and phonon scattering are studied. Band-structure effects in p-type nanowire transistors are also investigated.
Strain has been introduced into the channel region of metal-oxide-semiconductor (MOS) field-effect transistor to improve its operating speed in modern integrated circuits (IC). In this work, we investigated the influence of uniaxial compressive and tensile strains on the nanoscale electrical characteristics of thin gate silicon dioxide (SiO2) films. Both the nanoscale I-V characteristics and cumulative...
In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension random dopant fluctuations (SDE-RDF) in silicon nanowire MOSFETs (SNWTs) are investigated, in terms of electrostatic properties, source/drain series resistance (RSD), and driving current. The SDE-RDF induced variations of threshold voltage (Vth) and DIBL in SNWTs with different diameters are found to...
In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore' domain and also explore novel operating principles in `Beyond CMOS' domain.
In this paper a new approach for converting nano-scale mechanical energy into electric energy by piezoelectric zinc oxide nanowire arrays is discussed. The operation mechanism of the nanogenerator relies on the piezoelectric potential created by an external strain; a dynamic straining of the nanowire results in a transient flow of the electrons in the external load due to the driving force of the...
So far the most aggressive manufacturing forecast for 22nm technology node is in late 2011, and there still remains many arguments for its next generation, 15nm manufacturing technologies. The major obstacles in front of the manufacturing are (1) high cost fine patterning technology, (2) tradeoff of SRAM cell size and performance, (3) increasing variability, (4) short channel effect control, etc....
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