The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The review addresses the major challenges that Nanoelectronics will have to face in the next decades. A multifaced strategy is followed to scale down CMOS based technology with new materials and disruptive architectures, heterogeneous integration, alternatives to MOSFET for information processing introducing 3D schemes at the Front End and back end levels.
For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.
In this paper, an ultra-wideband low-noise-amplifier (LNA) is designed for low-voltage and multi-standard applications in 0.13 μm CMOS technology. Based on conversional resistive-negative-feedback structure, a novel feedback inductor technology is proposed. The presented LNA achieves a voltage gain of 14.7 dB, 2.95-4.1 dB noise figure from 0.5-10.6 GHz including test buffer. And the IIP3 is -7.2dBm...
The nc-Si nonvolatile memory devices with high performance have been fabricated by using general CMOS techniques. High resolution transmission electronic microscope (HRTEM) shows that the average size of nc-Si is 8 nm and its density is 3×1011/cm2. The performance of programming/ erasing and retention time is mainly depending on the quality and thickness of tunnel layer and control layer. The results...
Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed...
A novel silicon-controlled rectifier (SCR) device with high-current low-voltage triggering characteristics is proposed to improve Electrostatic Discharge (ESD) immunity of the input gate oxide based on a standard 2-μm CMOS technology. The numeral simulation results shows that the device has a low trigger voltage (~11V) to effectively protect the gate oxide under ESD-stress conditions, and it also...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.