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A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
A novel 150V-BCD technology by using 14um thick epitaxy based on 0.35um standard CMOS process has been developed for LCD backlighting application. In the whole process with 24 steps, HV circuit block, including VDNMOS and LDPMOS with double resurf principle, and LV block are integrated together. Advanced deep trench isolation (DTI) technology with the breakdown voltage above 150V is firstly in place...
High breakdown voltage GaN HEMTs was developed for power electronics application. The device with source connected field plate (FP) was fabricated, which demonstrated perfect hard breakdown characteristics. A high breakdown voltage of 740V was obtained in air ambient while gate-drain spacing Lgd and FP length LFP equaled to 20μm and 2μm respectively. Specific on-resistance of the device was 14mΩ.cm...
A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage...
A novel silicon-controlled rectifier (SCR) device with high-current low-voltage triggering characteristics is proposed to improve Electrostatic Discharge (ESD) immunity of the input gate oxide based on a standard 2-μm CMOS technology. The numeral simulation results shows that the device has a low trigger voltage (~11V) to effectively protect the gate oxide under ESD-stress conditions, and it also...
A driver for high-voltage (HV) single chip synchronous buck converters with a n-channel lateral double diffused MOS (nLDMOS) as power switches and a high speed low power level shifter is presented. Using a short time fast speed pull-down circuit, the level shifter realized high speed with a limited bias current. The circuit is implemented using UMC 0.5-μm 30V LDMOS process, and has been integrated...
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