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Graphene, a two-dimensional carbon form with the highest intrinsic carrier mobility and many desirable physical properties at room temperature, is considered a promising material for ultrahigh speed and low power devices with the possibility of strong scaling potential due to the ultra-thin body. (Fig. 1) [1-3] Here IBM reports progress in graphene nanoelectronics, synthesizing wafer-scale monolayer-controlled...
La2O3 insulators have been prepared by ALD using La(iPrCp)3 and H2O as the source materials. We identified two necessary conditions to achieve the self-limiting growth: temperatures lower than 200°C and extremely long purging after H2O pulses. La2O3 insulators annealed at 500°C showed good MOS properties with no hysteresis and small flat-band voltage shift. Comparisons to the have La2O3 films prepared...
High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (VTH) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition...
In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore' domain and also explore novel operating principles in `Beyond CMOS' domain.
High-performance implant-free In0.53Ga0.47As-channel MOSFETs grown on GaAs substrates by Metalorganic Chemical Vapor Deposition (MOCVD) are demonstrated. Atomic-layer-deposited (ALD) Al2O3 was used as gate dielectric on top of a δ-doped In0.53Ga0.47As/In0.51Al0.49As metamorphic heterojunction structures grown on GaAs substrates. A 1-μm gate-length MOSFET with 15nm Al2O3 shows a maximum drain current...
The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on III-V materials. For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The research on ALD approach is of particular interest,...
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