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The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel...
In this work, we study the impact of device self-heating on Bulk and double-gate silicon-on-insulator (DGSOI) technologies using self-consistent electrothermal (ET) simulations. Device characteristics of Bulk and DGSOI MOSFETs have been studied to estimate device performance and the impact of self-heating on the same. Self-heating effect (SHE) on the AC performance has also been studied for these...
In this paper, we propose a junctionless vertical MOSFET (JLVMOS) based on bulk-Si wafer. According to the numerical simulations, the proposed JLVMOS can get a steep subthreshold swing (S. Swing), reduced DIBL, and higher ION/IOFF ratio, in comparison to a junctionless planar SOI MOSFET. This is because the vertical double-gate (DG) structure truly helps reduce the short-channel effects (SCEs). More...
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