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An VPNP device optimization technology was presented for complementary bipolar process. Based on process and device simulation, an SIC process for high speed NPN transistor improvement was applied to the optimization of VPNP transistor. Sub-micron VPNP trasistor increases its feature frequency by 30%, namely, more than 3.0GHz. It features breakdown voltage of BVceo>6.0V, which results to a wider...
The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Si1-xGex (100) surfaces, is achieved at temperatures below 500°C. B doping dose of about 7× 1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier...
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