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We have developed a new thermal CVD technique for poly-SiGe thin films that meets the requirements for low-cost fabrication of post-amorphous silicon (a-Si:H) TFTs, i.e., Reactive Thermal CVD featuring a set of reactive source materials of disilane (Si2H6) and germanium tetrafluoride (GeF4). We succeeded in deposition of poly-SiGe thin films at 450°C or higher on glass substrates by this technique...
Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as...
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