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A multiloop method is presented for highly nonlinear ring oscillators in this paper. This circuit permits lower tuning gain through the use of coarse/fine frequency control, which also translates into a lower sensitivity to the voltage at the control lines. A 8-GHz VCO in SMIC 0.18μm 1P6M CMOS technology is designed. The linear tuning range of VCO is from 7.95 to 8.45GHz with the tuning voltage vary...
A wide tuning range LC VCO with auto amplitude control is designed in 0.13-μm CMOS. Phase noise optimized design for the wide tuning range VCO is discussed and a PVT insensitive digitally reconfigurable auto amplitude calibration (AAC) circuit is used to stabilize the phase noise in the whole wide band. The proposed AAC circuit with a code estimated FSM provides faster operation to get the optimum...
A 6-GHz low-phase-noise voltage-controlled oscillator (VCO) is proposed. A varactor based coarse tuning method which differs from the traditional switch-capacitor based architecture is adopted. The source feedback resistors and a modified filtering technique are used to suppress low and high frequency noises of current source, respectively. To verify the concept, a prototype VCO is fabricated in 0...
This paper reports a Digitally Controlled Oscillator (DCO) with 20kHz frequency resolution. This is the first DCO implementing capacitor delta tuning and Dynamic Element Matching (DEM) to suppress process variations and mismatches between small capacitor deltas. The DCO is fabricated in 0.13μm CMOS IBM technology. The proposed DEM technique reduced the process variations and mismatches from 95% to...
A 4th order Chebyshev complex filter with stop band zeros at the DC point for low-IF receivers' applications using 0.18μm CMOS technology is proposed in this paper. Based on capacitor-OTA integrators, the designed ladder filter uses resistors instead of capacitors to realize the transmission zeros. The complex filter has a 0 to 48dB tunable gain (6dB per step) and over 65dB DC-offset rejection. A...
High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (VTH) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition...
This paper presents a 6th-order Active-RC filter for multi-mode applications. The filter exploits Butterworth structure with digitally-controlled resistor and capacitor arrays, which is flexible for bandwidth tuning. The chip is fabricated in SMIC 0.13μm CMOS process, occupies an area of 0.83mm2. The measurement results indicate the filter provides a wide tuning range from 400kHz to 20MHz and achieves...
An overview is given for the current state-of-the-art of tunable RF elements. For this purpose, tunable RF elements such as thin-film Barium Strontium Titanate (BST) varactors, Micro Electro Mechanical Systems (MEMS) based capacitive switch banks and varactors, as well as semiconductor based capacitive switch banks and varactors are reviewed. Their benefits and shortcomings are discussed and compared...
In this paper, we examine the physical properties of NiSi/p-Si implanted with various combinations of aluminum (Al) and sulfur (S) doses for Schottky barrier tuning. Techniques used included HRTEM, TOF-SIMS, HAADF STEM, and EDX. We also measured the integral interfacial dose (IID) of Al and S, i.e. amount of Al and S found with 2.5 nm of the interface, and correlated it to the Schottky barrier height...
In this paper, based on the interdigital capacitance, a kind of optimizing approach by tuning length of the interdigital lines respectively is presented. And the workload could be reduced greatly when this approach is applied to the left-handed transmission line(LH-TL) design. From the simulation results, it can be seen that the passband width of the LH-TL could be increased significantly. After that,...
A low phase-noise 24GHz VCO (voltage-controlled oscillator) for mm-wave WLANs (wireless LANs) using IBM 90nm CMOS process is presented. A current source is used to minimize the impact due to the process variation. Biasing filter technique is adopted to improve the phase noise performance. In addition, optimized switches are proposed to prevent phase noise degradation. Simulation shows that -101dBc/Hz...
A wide tuning range LO generation architecture and its implementation for Software-Defined Radio (SDR) is presented. A continuous wide tuning range is achieved by using a dual mode VCO, a quadrature single sideband mixer and frequency dividers. The dual mode VCO can work either in a wideband mode or in a quadrature mode to support the proposed architecture. The circuit is implemented in TSMC 0.13μm...
A fully integrated wide band voltage-controlled oscillator (VCO) for multi-band multi-mode GNSS receivers is proposed and designed in 0.18μm CMOS topology with a 1.8V supply voltage. Dual core technique is used to achieve wide frequency tuning range and to reduce the power consumption. Complementary cross-coupled topology is chosen for lower 1/f corner and less power dispassion. The proposed dual-core...
A third order Gm-C reconfigurable Butterworth low-pass filter for SDR receivers with a tunable cutoff frequency of 5M to 50M is presented. A positive feed-forward compensation Gm-cell is utilized to improve the linearity of the filter. The filter has been implemented in SMIC 130nm CMOS process. It occupies 0.63 mm2 die area and consumers 12mA - 16mA current with a 1.2V power supply. The measured in-band...
It is very desirable to have tunable or reconfigurable RF front-end and devices for the modern wireless mobile phones since they need to operate over multiple bands, ranging from 700 MHz to 2700 MHz. The role of MEMS tunable capacitors with high Q factors is crucial in the tunable RF front-end for the modern mobile phones. In this paper, we will show the attractive performance of MEMS tunable capacitors...
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