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In this study, we propose a new technology to fabricate pseudo tri-gate vertical (PTGV) MOSFETs without p-n junctions, named junctionless PTGVMOS (JPTGV). According to numerical analysis, the excellent electrical characteristics such as subthreshold swing (S.S.) ~ 60mV/dec, Ion/Ioff ~ 1010, and low interface trap density are all achieved. The device without p-n junctions provides an easier way for...
Porous organosilica thin films using 1,2-bis (triethoxysily) ethane, triethoxymethylsilane and a poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) triblock copolymer template have been prepared by spin-on technique. The films were characterized by cross-sectional scanning electron microscopy, x-ray diffraction and Fourier-transform infrared spectroscopy. After thermal treatment at...
The first material of silicon dioxide (SiO2) had been proposed as a chemical transducer element of pH sensitive membrane around the early of 1970s. In 1981 Matsuo et al. proposed Ta2O5 as pH sensing membrane. Start from that moment, many materials have been wildly investigated, e.g. Al2O3, SnO2, WO3. The rare -earth oxide, Samarium oxide (Sm2O3), is an attractive material to substitute the previous...
In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs...
In this paper, we propose a simple trench-oxide thin-film transistor (TO TFT) process for 1T-DRAM applications. Our proposed TO TFT structure has several novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (~ 84%) and the retention...
As the MOSFET's channel length is scaling down, SRAM stability becomes the major concern for future technology. The cell becomes more susceptible to both process induced variation in device geometry and threshold voltage variability due to doping fluctuation in the channel region. In this paper, a novel highly stable 10T SRAM cell is proposed which eliminates read SNM during read and write operation...
In this paper, a monolithic linear charger for single-cell Lithium-ion batteries is presented. It is capable of operating within USB power specifications and adopts multiple charging modes (constant-current and constant-voltage). Due to novel constant-current and constant-voltage charging circuits, it achieves high stability and high accuracy charging voltage. In addition, an internal thermal feedback...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and raman spectral analysis showed that only the silicides low resistance phase (NiSi), rather than high resistance phase (NiSi2), was present in...
In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La2O3 high-k gate dielectric. An EOT of 0.43nm was obtained from a TiN/W/La2O3(3nm)/n-Si capacitor by optimizing the thickness W layer. Our results show that a proper gate electrode is one of the most important factors for realizing EOT below 0.5nm.
Ultra-high-vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO, low interfacial densities of states (Dit's) ~ 1011eV-1cm-2, and thermal stability at high...
To further improve the performance of the bias stability which is the key character for MEMS gyroscope in navigation application, a new digital self-oscillation based drive circuit with drive phase correction is proposed. Started with the gyroscope working principle, analyzed the factors that may affect the bias output. Compared with drive amplitude control which already got a higher precision, the...
F-doped SiOCN films with low dielectric constant have been prepared using SiH4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I-V) measurements, and nano-indenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration...
The thermal stability and electrical properties of Cu contact on the NiSi substrate with a Ru/TaSiN barrier stack were investigated. The Ta/Si atomic ratio of the TaSiN is varied to optimize the barrier property. The results show that by introducing certain amount of Si into the TaN film, the Ru/TaSiN structure can be both thermally and electrically stable up to 500°C annealing for 30 minutes. The...
The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.
High-quality germanium oxynitride (GeON) gate dielectrics for Ge-based metal-oxide-semiconductor (MOS) devices were fabricated by plasma nitridation of ultrathin thermal oxides on Ge(100) substrates. Although ultrathin oxides with abrupt GeO2/Ge interfaces can be formed by conventional dry oxidation, air exposure results in serious electrical degradation. It was found that plasma nitridation forms...
We discuss the effect of scaling of the Ni thickness on the formation and stability of nickel silicide contacts. When scaling the Ni thickness from 15nm down to 5nm, the start of the agglomeration of the resulting NiSi layer is gradually shifted towards lower temperature. The influence of the microstructure of the polycrystalline NiSi layer on the agglomeration behavior, and methods to stabilize the...
We present a novel bulk-Si dual-channel source/drain-tied (DCSDT) MOSFET with the multiple epitaxial growth of SiGe/Si layers, and selective SiGe removal to form the block oxide island (BOI). Based on the simulations, the SDT scheme achieves better DC characteristics than body-tied (BT) scheme such as: Ion (20% increased), Ioff (71% reduced), Rsd (5.3% decreased), S.S. (19% improved), DIBL (35% reduced),...
In this paper several sub-cell and unit-cell power heterojunction bipolar transistor were fabricated and the impact of device dimension and structure on the device characteristic of sub-cell and unit-cell power HBT Transistor is analyzed and discussed. It was found that: for the sub-cell HBT with different dimension a larger emitter size means smaller RF gain. When the sub-cells were used to form...
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure...
VDMOS device (Vertical Double-diffused Metal Oxide Semiconductor) has the features of higher input impedance, lower drive current, higher switching speed, better frequency characteristic, bigger safety operating area and better thermal stability, which is used in many fields, such as switches in power electronic systems, so it has become the research focus of discrete power semiconductor devices....
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