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A new type of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with self-aligned metal electrodes (SAME) is systematically characterized. New device features different from conventional poly-Si TFTs are found, and are attributed to the presence of Schottky barriers at the channel ends.
It has been proposed in the literature to use metal field plates (FPs) in order to increase the breakdown voltage (BV) of AlGaN/GaN HEMTs. In this article we analyze the possibility of using multiple FPs to increase the gate-to-drain BV. We show that FPs with variable oxide thickness (with thinner oxide towards the gate electrode and thicker oxide thickness towards the drain electrode) increase the...
The electrical transport behavior of carbon nanotube field-effect transistors (CNT-FETs) decorated with gold nanoparticles (NPs) has been investigated. After decoration with Au NPs, the Ion/Ioff ratios of nanotube FETs decrease and some of the p-type devices even change into metallic ones. The Au NPs decrease the contact resistances between the CNTs and metal electrodes, and accordingly increase the...
Coulomb diamonds were clearly observed on single-electron transistors (SETs) fabricated by bottom-up processes of electroless plating of Au nanogap electrodes and chemisorption of a Au nanoparticle at 80 K. In the drain current-drain voltage characteristics, Coulomb staircases were modulated by the side gate voltage. Tunneling resistances and source/drain/gate capacitances of the SET were evaluated...
A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La2O3 high-k gate dielectric. An EOT of 0.43nm was obtained from a TiN/W/La2O3(3nm)/n-Si capacitor by optimizing the thickness W layer. Our results show that a proper gate electrode is one of the most important factors for realizing EOT below 0.5nm.
We have investigated the role of oxygen in Hf-based high-k gate stacks on Vfb shift. It is clearly shown that the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant irrespective of the oxidation annealing temperature. On the other hand, the HfO2-based high-k materials of the strong ionic oxide caused the positive Vfb shifts by introducing additional oxygen into high-k...
We would like to report our approaches to realize epitaxially grown source toward high drain current in III-V MISFET. One approach is an InP/InGaAs composite channel MISFET with regrown InGaAs source/drain. When gate length of 150 nm was fabricated, Id at Vd = 0.8 V was 0.8 A/mm and maximum gm was 0.38 S/mm at Vd = 0.5 V. The other approach is vertical FET. In case of vertical FET with dual gate,...
In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO2/p-Si(100) structure was investigated. Comparing with TiN/SiO2/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat band voltage obviously shifts toward the negative bias direction,...
1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
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