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The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. High-resolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100°C. With the implantation dose 1016cm-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×1015cm-2...
GaN is very promising for power switching transistors taking advantages of the high breakdown strength with high saturation electron velocity. The lateral and compact device configuration enables high speed switching with reduced on-state resistance and parasitic capacitance. In this paper, state-of-the-art device technologies of GaN transistor and its monolithic integration for switching applications...
One way to increase the breakdown voltage in heterojunction field-effect-transistors (HFETs) on silicon substrate is to introduce a transition (buffer) layer made of a sandwich of thin AlN/AlGaN layers between the silicon substrate and the GaN well. The effect of this transition layer is to average out and, in this way, to reduce the local mechanical stress that appears between the silicon substrate...
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