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A novel hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage has been proposed. The rectifier features a Schottky gate controlled channel between the cathode and anode, by integrating the recessed-Schottky gate and anode Ohmic contact together (hybrid-anode). The turn-on voltage of HA-FER is determined by the threshold voltage of the channel instead of the Schottky barrier,...
This paper presents a reliability evaluation of Schottky contact of AlGaN/GaN HEMT. The Schottky barrier height(SBH) and ideality factor are investigated through the current-voltage (I-V) characteristics. Two kinds of ac voltages with different frequencies (10 kHz and 1 MHz) are applied on the two similar Schottky contacts of AlGaN/GaN HEMT, and the I-V curves are measured. From the measured results,...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
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