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The internal gettering (IG) of Cu contamination in Czochralski (Cz) silicon wafers has been investigated using both a conventional IG process based on high-low-high (H-L-H) annealing and a rapid-thermal-process (RTP) based magic denuded zone (MDZ) process. It is found that a denuded zone (DZ) and bulk micro-defects (BMDs) acting as the gettering sites were formed in both cases. However, after cross-sectional...
Porous organosilica thin films using 1,2-bis (triethoxysily) ethane, triethoxymethylsilane and a poly (ethylene oxide)-poly (propylene oxide)-poly (ethylene oxide) triblock copolymer template have been prepared by spin-on technique. The films were characterized by cross-sectional scanning electron microscopy, x-ray diffraction and Fourier-transform infrared spectroscopy. After thermal treatment at...
In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600°C for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500°C annealing.
La2O3 insulators have been prepared by ALD using La(iPrCp)3 and H2O as the source materials. We identified two necessary conditions to achieve the self-limiting growth: temperatures lower than 200°C and extremely long purging after H2O pulses. La2O3 insulators annealed at 500°C showed good MOS properties with no hysteresis and small flat-band voltage shift. Comparisons to the have La2O3 films prepared...
In this paper, ZnO nanorod arrays used as transparent conducting oxide(TCO) were fabricated on ZnO seed layers though a hydrothermal method and the seed layers were prepared by sol-gel method. Different pre-annealing temperature varying from 300°C to 400°C and different hydrothermal precursor concentration varying from 0.005 to 0.15M were studied. The effects of seed layers pre-annealing temperature...
The surface passivation properties of hydrogenated amorphous silicon suboxides (a-SiOx:H) deposited by plasma-enhanced chemical vapour deposition (PECVD) have been investigated. The process gases were nitrous oxide and a mixture of silane and helium at a deposition temperature of ~250 °C. Minority carrier lifetimes up to 270 us on 4·Ω·cm p-type float-zone silicon wafers were obtained. With thermal...
SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied...
The first material of silicon dioxide (SiO2) had been proposed as a chemical transducer element of pH sensitive membrane around the early of 1970s. In 1981 Matsuo et al. proposed Ta2O5 as pH sensing membrane. Start from that moment, many materials have been wildly investigated, e.g. Al2O3, SnO2, WO3. The rare -earth oxide, Samarium oxide (Sm2O3), is an attractive material to substitute the previous...
Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface...
The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. High-resolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100°C. With the implantation dose 1016cm-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×1015cm-2...
Based on MOS capacitors, this work aims to study the thermal and electrical characteristics of HfLaON with different nitridation treatments by evaluating the device properties and monitoring the induced changes.
ZnO-based thin film transistors (ZnO-TFTs) were fabricated by sputtering of ZnO on 200 nm SiO2 on p+-Si substrates. Forming gas annealing (FGA) was carried out directly after deposition at 400°C, 450°C, and 500°C for 1h. TFTs annealed at 400°C exhibited a high threshold voltage (VTh) of 11 V while those annealed at 500°C showed a low VTh of -3 V. Saturation mobility (μsat) increased slightly with...
Nb2O5-Al2O3 nanolaminate films have been grown by atomic layer deposition using (Nb(OC2H5)5)/H2O, and Al(CH3)3/H2O precursors, respectively. Effect of rapid thermal annealing (RTA) on the optical properties of the nanolaminate has been studied using Fourier transform infrared spectroscopy (FTIR), and spectroscopic ellipsometry. From the FTIR result, Al2O3 suppresses the formation of interfacial layer...
In this paper, the mechanisms of the bulk heterojunction organic solar cells for improved energy conversion efficiency are investigated and reviewed. Based on these mechanism understandings, a simple tandem structure design is thus proposed and demonstrated, which shows the promising performance.
In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension random dopant fluctuations (SDE-RDF) in silicon nanowire MOSFETs (SNWTs) are investigated, in terms of electrostatic properties, source/drain series resistance (RSD), and driving current. The SDE-RDF induced variations of threshold voltage (Vth) and DIBL in SNWTs with different diameters are found to...
In this study, we investigated the electrical characteristics of p-channel transistor by changing the process sequence of P+ Source/Drain Ion Implantation (IIP) N2 annealing process in NAND Flash memory. For the case of changing the process sequence of N2 annealing, off-current of p-channel transistor was dropped sharply, and increase of the on current compared to the off current is not worse than...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and raman spectral analysis showed that only the silicides low resistance phase (NiSi), rather than high resistance phase (NiSi2), was present in...
We have investigated the growth and crystalline properties of tensile-strained Ge and Ge1-xSnx heteroepitaxial layers for high-mobility channels. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing...
To achieve an ultra-shallow junction formation with low resistivity, Cluster Carbon (CC) co-implantation for NMOS source drain and source drain extension condition are investigated. It is found that using CC co-implantation, Phosphorus (P) TED was suppressed and the lower junction depth Xj is achieved. The sheet resistivity Rs is increased with the increment of the Carbon dose, but the Rs×Xj product...
The influence of neutron irradiation on the deep levels in GaN epilayer is studied. Thermal stimulated current (TSC) and low temperature photoluminescence (PL) techniques are used to determine the position of deep levels. Four traps are found in irradiated GaN and five traps in unirradiated sample by resolving TSC spectrum. The activation energy (Et), capture cross section (St), and concentration...
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