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10th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2010). 2nd IEEE International Workshop on THz Radiation: Basic Research and Applications (TERA 2010)
The main requirements for the MCT (CdxHg1-xTe) structures optimization for increase of the stimulated emission wavelength under optical pumping are discussed. The stimulated emission at wavelengths 2-2.5 μm at room temperature from optimized MCT structures is observed experimentally. The obtained experimental data are the first observation of stimulated emission from the MCT structures at these wavelengths...
Theoretical model of how LBIC signal from p-n junction being scanned by two laser beams is formed was proposed. Physical effects which make impact in overall phase of the LBIC signal were pointed out. Experimental research of illuminating surface of laser diode was conducted. Experimental dependencies of the phase of LBIC signal on the coordinate of scanning laser beams were obtained. Possibilities...
Using numerical modeling, influence of tuning the lasing frequency within the gain band on the modulation response of quantum-well heterolasers in the GaInAs-GaInAsP system versus the modulation frequency of pump current is investigated. It is established that maximum values of the frequency width of the response band and possibilities of realization of high-speed regimes at signal transmission in...
In the given paper we proposed an effective finite-difference scheme for a two-dimensional problem of femtosecond pulse influence on a semiconductor in the case of nonlinear dependence of light energy absorption coefficient on electric field potential.
The experimental results causing the trench of subwavelength nanostructures formation in semiconductor's 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their...
Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12-300 K and electron energies of 3.5-8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on...
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