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10th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2010). 2nd IEEE International Workshop on THz Radiation: Basic Research and Applications (TERA 2010)
The influence of In surface segregation and internal fields induced by polarization charges on the band structure on InGaN/GaN quantum wells is studied in the frame of 6×6 multiband model. The indium surface segregation leads to the blue shift of the transition energy (70 meV for the segregation length 1nm at both heterointerfaces) while the piezoelectric polarization itself causes the red shift....
Polariton modes in quantum-well traps for Bose-condensation of excitons are studied. It is found that some modes can become unstable and start lasing due to exciton spectrum narrowing during condensation. A model of such lasing is developed, showing different lasing regimes and possible coherent features of recombination emission of excitons.
We demonstrate an explicit numerical method for accurate calculation of the scattering matrix, and its poles, and apply this method to describing the multi-channel holes scattering in multiple-quantum-wells (MQW) structures. The results of calculations show that in contrast to the single quantum-well case, at some values of MQW parameters the number of S-matrix poles may exceed that of the absolute...
Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.
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