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10th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2010). 2nd IEEE International Workshop on THz Radiation: Basic Research and Applications (TERA 2010)
The influence of In surface segregation and internal fields induced by polarization charges on the band structure on InGaN/GaN quantum wells is studied in the frame of 6×6 multiband model. The indium surface segregation leads to the blue shift of the transition energy (70 meV for the segregation length 1nm at both heterointerfaces) while the piezoelectric polarization itself causes the red shift....
Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 μm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 μm multimode fiber (MMF).
Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.
Using numerical modeling, influence of tuning the lasing frequency within the gain band on the modulation response of quantum-well heterolasers in the GaInAs-GaInAsP system versus the modulation frequency of pump current is investigated. It is established that maximum values of the frequency width of the response band and possibilities of realization of high-speed regimes at signal transmission in...
Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency...
Stimulated emission from quantum dots arrays has been observed under optical pumping. The emission has been observed from the ground state for electrons (λ ≈ 1.31 μm) and from two higher levels (λ ≈ 1.21 μm, 1.12 μm). The measured values of the amplification coefficient are rather high, up to 15 ÷ 17 cm-1. Procedure of the amplification coefficient measurements in the active media has been discussed.
We report the spatial anisotropy of the acoustooptical figure of merit M2 in LiNbO3:MgO and GaP crystals. The analysis is based on the indicative surfaces being calculated for different geometries of the acoustooptical diffraction. Basing on these results the most efficient geometries of the acoustooptical cells made of these crystals are determined. It give a possibility to increase the application...
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