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10th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2010). 2nd IEEE International Workshop on THz Radiation: Basic Research and Applications (TERA 2010)
The influence of In surface segregation and internal fields induced by polarization charges on the band structure on InGaN/GaN quantum wells is studied in the frame of 6×6 multiband model. The indium surface segregation leads to the blue shift of the transition energy (70 meV for the segregation length 1nm at both heterointerfaces) while the piezoelectric polarization itself causes the red shift....
The main requirements for the MCT (CdxHg1-xTe) structures optimization for increase of the stimulated emission wavelength under optical pumping are discussed. The stimulated emission at wavelengths 2-2.5 μm at room temperature from optimized MCT structures is observed experimentally. The obtained experimental data are the first observation of stimulated emission from the MCT structures at these wavelengths...
Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.
As-grown ZnO:In crystalline plates demonstrate strong near-band-edge emission related to exciton recombination (380 nm - free excitons; 395 and 406 nm - excitons localized in the impurity centers). Fabry-Perot mode structure is observed for last two bands. Dramatically increasing narrow line (396 nm, Δλ ~ 3.3 nm) is connected with EHP recombination.
The experimental results causing the trench of subwavelength nanostructures formation in semiconductor's 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their...
Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12-300 K and electron energies of 3.5-8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on...
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