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Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
Large band gap materials such as diamond (5.5 eV) and AlN (6 eV) offer the possibility of making MEMS structures out of a single material by varying the doping level to achieve the semi-conducting, metallic and insulating (undoped) properties needed in a typical MEMS structure. Polycrystalline diamond (poly-C), which has recently been used in the fabrication of BioMEMS, RFMEMS, and MEMS packaging,...
The intrinsic hydrogenated nano-crystalline silicon (nc-Si:H) films for p-i-n tandem solar cells have been deposited by plasma enhanced chemical vapor deposition (PECVD) assisted with direct current bias, and were investigated by four-point probe sheet resistance measurement, Raman and ultraviolet-visible (UV-VIS) transmission spectra. By varying technological conditions, the dependence of the conductivity...
The effects of growth conditions on the morphology of ZnO nanostructures grown by CVD process with Au catalyst were systemically studied and the key factors controlling growth were identified. Two growth modes of ZnO formation were observed: self-catalyzed growth on Si substrate and gas-phase nucleation and growth. In the former case, the ZnO nanostructures grow by the vapor-solid mechanism and the...
As an excellent thermal isolation approach, deep trench filled by parylene C has been widely used in versatile MEMS devices. Requirement of void-free trench filling in these applications called for a deep understanding of the parylene C deposition in high aspect ratio trenches. In this work, a molecular effusion-Boltzmann model is advanced to predict the parylene C filling behaviors. Numerical simulation...
An ultra-deep (40-120um) electrical isolation trench without void has been fabricated. The process combines DRIE (deep reactive ion etch), LPCVD insulating material refilling, RIE (reactive ion etching), and TMAH or KOH backside etching technology. With the alternation of refilling and etching, the profile of the opening of the trenches has been modified; the keyholes in trenches are prevented; as...
In this study, we utilized porous anodic aluminum oxide (AAO) template to assist synthesizing carbon nanocoils with high uniformity. By confining the space of growth, we have successfully obtained carbon nanocoils with superior uniformity. Synthesizing carbon nanocoils with catalytic thermal chemical vapor deposition assisted by removable anodic aluminum oxide template. We obtained uniform carbon...
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