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The contribution will comment on the role of silicon carbide based power semiconductor devices in industrial electronics with a focus on high power densities and improved efficiency. Starting with an introduction into the basic properties of silicon carbide semiconductors it will be sketched how these features can be favorably used in order to minimize volumes of electronic components and/or reduce...
Soft-switching techniques are an enabling technology to further reduce the losses and the volume of automotive dc-dc converters, utilized to interconnect the high voltage battery or ultra-capacitor to the dc-link of a Hybrid Electrical Vehicle (HEV) or a Fuel Cell Vehicle (FCV). However, as the performance indices of a power electronics converter, such as efficiency and power density, are competing...
Grid-Connected power conditioning system (PCS) is widely used for distributed generation system. In Grid-Connected PCS, the LC filter is essential to reduce the current harmonics injected to the grid. In this paper adequate inductor core materials are selected to analyze the performance of 10 kW Grid-Connected Photovoltaic (PV) PCS. Core materials can be classified into three groups: power core, sheet...
SiC device is known by its outstanding property, such as low on resistance and short switching time for high voltage device. Recently, the SiC device technology is rapidly progressed; however the device performance in a power conversion circuit has not been clearly shown. The purpose of this work is to apply the SiC device in a DC-DC converter and to evaluate the power loss and efficiency of the converter...
The 5×4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=1V and Vgs=+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with Vth=2.3V. The SiC DIMOSFET is introduced into the PE circuits of the...
The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles. When super high-speed switching devises such as SiC-VJFET are operated in a power converter, their high dv/dt rate in the rise time and the fall time causes a high-frequency common-mode current. It is necessary to evaluate the EMI...
A planar parametric transformer using a laminated Si-Fe core has been proposed by the authors. The stable or unstable states of a parametric oscillation are represented by the Mathieu equation. The Mathieu equations under no-load and load conditions are obtained in this paper. The relationships between the stable-unstable state of a parametric oscillation and the operating point of the transformer...
State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new operating principle for the normally-off GaN...
A Smart Grid with distributed generation is critical for reducing greenhouse gas emissions. However, current power converters and circuit breakers built with silicon switches are very bulky and inefficient, making their use difficult in practical Smart Grid systems. The development of high voltage power devices based on SiC will be a critical development in building a Smart Grid with distributed and...
The unique wide bandgap properties of SiC allow the creation of high performance normally-off vertical JFET power device. Due to the vertical nature of the device, it can easily be designed with blocking capability exceeding 2kV with RDS(ON), sp > 3mΩ-cm2, resulting in the lowest specific on-resistance for enhancement mode SiC devices with VBR <; 1200V. The low RDS(ON), sp yields a small die...
This paper presents a thermal analysis and designs a water-cooled heat sink for an Si-IEGT and SiC-PiN diode module rated at 4.5-kV and 100 A. The operation temperature and thermal conductivity of the SiC-PiN diode are higher than that of the Si-IEGT. Therefore a design procedure for the water-cooled heat sink should be considered characteristics of each device. This paper shows a thermal analysis...
In this paper, in order to realize high voltage static switches of voltage source inverters in high power applications, two series connected 4.5kV rate Si-IEGT with SiC-PiN diode pairs (hybrid combination) are considered with hard switching method. The switching test of power module that is hybrid combination is carried out under 5kV DC bias voltage. The gate driver circuit is designed by high output...
In this paper, a new Punch Through Trench IGBT using a Si(1-x)Gex N+ buffer layer is investigated by using two dimensional finite elements numerical simulations. The performances of this device are mainly obtained from the reduction of the turn-off switching time for a slight elevation of the on-state voltage. A study of the main static characteristics has been performed, particularly the relevance...
Cosmic-ray neutrons can trigger a single-event burnout (SEB), which is a catastrophic failure mode in power semiconductor devices. It was found experimentally that the incident neutron induced SEB failure rate increases as a function of the applied collector voltage in an insulated gate bipolar transistor (IGBT). Moreover, the failure rate increased sharply with an increase in the applied collector...
Silicon carbide (SiC) is an expected candidate as a material for the next generation power semiconductor devices. In this paper, the authors evaluate the power device loss of a DC-DC buck converter, where the silicon (Si) free wheeling diode is replaced with an SiC Schottky barrier diode (SBD). The loss reduction of the DC-DC buck converter is discussed with respect to switching frequency and duty...
The performance of high-power inverters strongly depends on the characteristics of the underlying semiconductor device. The design of such devices is typically a compromise between on-state losses and switching losses. The idea analyzed in this paper is to combine two GCT devices into one single wafer, one switching-optimized GCT structure and one conducting-optimized GCT. By a parallel connection...
The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
In this paper, GaN-based HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA=3D 5.9 mΩcm2 and Vb=3D...
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