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This study reports the effect of different barrier on Cu interconnect performance. A thin “enhancement” layer of Ru or Co film is deposited between a PVD Ta(N) liner barrier and a Cu seed layer to improve copper to barrier adhesion and copper gap fill. With the enhancement layer of either Ru or Co, no void is found in dual damascene structure with very thin seed. The electrical performance is improved...
Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native Co oxide grew rapidly within a few hours (XPS). Incorporation of oxygen and carbon in the CVD Co films (by AES and SIMS) depended on underlying materials, such as Ta, TaN, or Ru. Copper film texture (by XRD) and agglomeration resistance (by...
A process sequence has been developed and characterized to fabricate interconnect structures in MEMS devices capable of withstanding thermal cycles up to at least 700°C. Via test structures with 3-7 μm diameter and 5-10 μm depth were etched in thermally oxidized silicon wafers and filled with platinum (Pt). Key enabling process steps were Pt electroplating and Pt CMP as reported herein. Target applications...
A Ti/TaN multi-layer can achieve a highly reliable Cu interconnect with a porous SiOC (ELK; k <; 2.5) structure. Ti shows good wettability with Cu and unique properties with extreme low-k (ELK)-structured interconnects. On the other hand, Ta is known to be an effective barrier to Cu diffusion. We confirmed that the Ti barrier is different from the Ta barrier from the viewpoint of metal-oxide behavior...
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