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Downstream electromigration (EM) study was performed to investigate the cap layer and the grain size effects on Cu EM reliability for the 45 nm technology node. Four sets of Cu interconnects were examined: large and small grains with and without a CoWP cap placed between the SiCN cap and the Cu lines. Without the CoWP cap, the EM lifetime was reduced by a factor of 1.9 when changing from large to...
We present a modified Berman model that relates breakdown voltage distributions, from dual voltage ramp dielectric breakdown (DVRDB) test, to the distribution of time-to-fail (TTF) during constant voltage stress (CVS) conditions, assuming that dielectric failure behavior under a constant voltage stress follows the square-root E-model. The methodology presented in this work demonstrates a fast and...
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