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A multilevel back-end-of-line structure with a dielectric constant κ ≤ 2.4 ultra low-κ materials was developed. κ=2.2 ULK build was demonstrated at a 144nm wiring pitch and a κ=2.4 ULK was demonstrated at a 288nm pitch. Good model-to-hardware correlation for the measured capacitance indicated no significant plasma damage to the ULK 2.2 material. The extracted copper resistivity was consistent with...
A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuOx reduction lowered line resistance, because Si diffusion causing line...
We have improved ELK film so that it is suitable for the processes used in fabricating Cu interconnects without using a dielectric protection layer for CMP, the so called “direct CMP process”. The depth profile of the pore size in the film was successfully controlled to prevent water absorption during the CMP process with a limited k-value increase in the film. The line-to-line dielectric breakdown...
We present a modified Berman model that relates breakdown voltage distributions, from dual voltage ramp dielectric breakdown (DVRDB) test, to the distribution of time-to-fail (TTF) during constant voltage stress (CVS) conditions, assuming that dielectric failure behavior under a constant voltage stress follows the square-root E-model. The methodology presented in this work demonstrates a fast and...
A Ti/TaN multi-layer can achieve a highly reliable Cu interconnect with a porous SiOC (ELK; k <; 2.5) structure. Ti shows good wettability with Cu and unique properties with extreme low-k (ELK)-structured interconnects. On the other hand, Ta is known to be an effective barrier to Cu diffusion. We confirmed that the Ti barrier is different from the Ta barrier from the viewpoint of metal-oxide behavior...
With evaluation of various dense silicon-oxy-nitride (SiON) films, a critical density and thickness against to Cu diffusion into Si substrate has been evaluated. Density of SiON films varied with deposition temperature using Plasma-Enhanced Chemical-Vapor-Deposition (PECVD) was ranged from 56% to 69% for bulk film. Cu diffusion increased with decreasing the film density, resulting in 3.5 × 1010 cm...
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