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A simulation of the Board Level Drop-Test is performed to evaluate some WL-CSP (Wafer-Level Chip-Scale Packages) performances. An elastic-plastic model is applied on both solder bump and copper pad materials. It intends to demonstrate that copper plasticity is mandatory due to the large plastic strain occuring in these materials. A statistical analysis discusses the required accuracy for the modeling...
This paper presents an integrated numerically-driven modelling methodology for the design of miniaturised/integrated (Mintegrated) products and the selection/control of associated manufacturing processes. The focus is on the numerical techniques and methods that underpin several design procedures aiding the embodiment design stage of product development. A design assistant tool is developed as an...
Despite the fact that epoxy has continuously used as encapsulant in electronic packaging, its joint with copper-based substrate is prone to delaminate during reliability test. A prime reason is the lack of adhesion between Cu and epoxy compound. To solve the problem, self-assembly molecular structure (SAM) is adopted to improve adhesion of epoxy-copper system. In seeing that hydrophobic behaviour...
Since the 1990's, computational fluid dynamics (CFD) has been widely adopted in the electronics industry for the thermal design of electronic products. Its advantages in terms of product improvements and enhanced productivity of design analysis, are undisputed. However, the industry has also experienced that incorrect product design decisions can be taken as a result of inaccurate CFD predictions,...
Atomic-scale computational materials engineering offers an exciting complement to experimental observations, revealing critical materials property data, and providing understanding which can form the basis for innovation. This contribution reviews the current state of atomic-scale simulations and their capabilities to predict mechanical, thermal, and electric properties of microelectronics materials...
Cu3Sn crystal is a well-known intermetallic compound (IMC), which is often observed at the interface of Sn solder and Cu metallization. It is generally recognized as the major cause of the failure of solder bumps and electrodes in microelectronics industry. The aim of the study is to investigate the elastic mechanical properties of orthorhombic Cu3Sn crystal by way of molecular dynamics (MD) simulation...
In this work we present a procedure for the construction of 3D networked epoxy moulding compounds and an estimation of basic thermodynamic properties by molecular dynamics simulations. Our investigations present part of general trend to extend failure analysis, reliability assessment and the development of packaging materials from the conventional discrete usage of simulation techniques to a more...
Today, the reliability forecast is a new challenge for the electronic packaging industry. This paper deals with a 3 dimensional electro-thermo-mechanical modeling method for reliability studies of MOSFET transistor. This modeling method increases the accuracy of the thermomechanical computation. The dissipated power mission profile is computed with an electro-thermal co-simulation. The link between...
A dynamic substructural method (DSM) is developed to simulate the board level drop test of a wafer level chip scale package (WL-CSP). Parametric study on package location at the test board, printed circuit board (PCB) thickness and WL-CSP package thickness is conducted in the board level drop test simulations. The peeling stress and first principle stress of the solder joints are checked and discussed...
In the last years many research works were focused on adhesion in micro-electro-mechanical systems (MEMS). In fact, that phenomenon can endanger the reliability of MEMS, both during the fabrication phase and in the operation conditions. The aim of the present study is to simulate the adhesion phenomena in different environmental conditions, by using Finite Element (FE) computational simulations on...
Advances in drop tower technology have extended the range of obtainable accelerations in drop testing from 5,000 Gs to as much as 100,000 Gs. To achieve excitations in excess of the conventional 5,000 Gs, a mechanical accelerator, called the Dual Mass Shock Amplifier (DMSA), is mounted on the drop table. This device produces extremely high, short duration shock amplitudes, by using secondary impacts...
Summary form only given. The ever increasing complexity and function integration of microelectronic products in combination with the decreasing design margins, the decreasing time-to-market, and ever increasing gap between technology advance and fundamental knowledge opposes a severe challenge for the microelectronics industry to meet the quality, robustness, and reliability requirements of their...
In this paper we first introduce sensor networks then we illustrate the problems of performance evaluation in such networks. We compare the two evaluation methods, simulation and experiments. We show how the assumptions and modellings in simulators impact the accuracy of simulation results, with our experience on evaluating flooding protocols in sensor network. We give some suggestions on whether...
This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through numerical approach. The electronic migration formulation that considers the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient has been developed. The parameter study for the Al line geometry with different width and...
A comparison between modelling and simulation methods in regard to model order reduction (MOR) in finite element (FE) simulation tools is presented. Two main software tools are taken into consideration: ANSYS Multiphysics 11 with its extension MOR for ANSYS 2.55 and COMSOL Multiphysics 3.5a with a model order reduction interface to MATLAB/Simulink. The results achived with both software packages are...
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