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Modulation-doped GaAs/In0.25Ga0.75As/Al0.3Ga0.7 As HEMT structures were grown using different MBE-growth temperatures and In0.25Ga0.75As channel thicknesses. Drain current DLTS measurements performed on these samples using a Fourier-Transform technique show that the concentrations of both bulk and interface traps depend greatly on growth temperature. In addition, a broadening of one of the DLTS peaks...
We show that a remarkable threshold shift ??Vp and an increase in the saturation current ??Ids can be observed in AlGaAs/InGaAs PM-HEMT's submitted to high temperature (100??C - 200 ??C) storage or hot-electron stresses for relatively short times (about 20 hours). An increase in Ids up to 40% has been observed. The increase is not permanent and can be recovered by a room or low temperature storage...
The temperature dependence of the Fowler-Nordheim tunnel current in a MOS structure is investigated both theoretically and experimentally between 25?? C and 400??C. The F-N current is found to increase substantially with temperature. The existence of effective pre-exponential and exponential F-N coefficients up to 400??C is demonstrated and validated by numerical simulations based on the general F-N...
In this work we present a detailed study of the electroluminescence properties of Si1-xGex/Si double heterostructure diodes. The diodes were grown selectively by low pressure chemical vapor deposition which enables to grow dislocation-free and fully strained Si1-xGex layers much above the critical thickness. The electroluminescence is shown to be due to the recombination of free excitons at lower...
We have verified the design of latchup-free bulk CMOS devices for operating temperatures up to 525K by simulation and measurement using a 1.0 micrometer twin tub ASIC process with epitaxial layer. It is possible to achieve an increase in holding voltage with rising temperature by applying design precautions. A special ASIC cell library for high temperature circuit operation has been developed and...
In this paper, an anomalous temperature dependence of hot carrier lifetime has been extensively studied for the first time. We have found that the hot carrier lifetime does not increase linearly with increasing stress temperature. On the contrary, around 90??C, hot carrier lifetime decreases with increasing stress temperature. Using the charge pumping method, we found that interface state distribution...
The processing and characterisation of 6H-SiC PiN diodes is described. Comparisons are made between diodes with different surface passivations, and numerical simulation is used to better understand their behaviour. A ``wet'' thermal oxide with a deposited silicon nitride layer on top is found to be the best surface passivation. This permits on-wafer high-voltage measurements to be made in air, possibly...
A new method for the extraction of the Drain Induced Barrier Lowering (DIBL) parameter in a MOSFET is presented. This method is employed for the study of the influence of temperature on the DIBL phenomenon. The DIBL coefficient is found to be almost temperature independent between 50K and 300K. The method also allows the intrinsic output characteristics of the device to be re-calculated.
We present experimental results of hot electron noise in Si doped n+nn+ AlxGa1-xAs structures with x=0.15, 0.2 and 0.25 using H.F.pulsed noise measurements. Noise temperature and longitudinal diffusion coefficient as functions of field strength are compared with Si doped GaAs data. Results are discussed from the point of view of electron scattering mechanisms. The possibility of self-heating effects...
The anomalous off current (Ioff) in poly-Si thin film transistors (TFTs) is one of the major problems preventing the use of these devices in active matrix liquid crystal displays. While previous investigations have focused on the temperature range above 300K, in this study we analyse the behaviour of Ioff over a wider range of temperatures, namely 180 to 400 K. Our results provide for the first time...
The impact of the silicon substrate properties on the electrical performance of p-n junction diodes is investigated. P-type substrates with different initial oxygen content and thermal preheat-treatment are compared with epitaxial and Float-Zone (FZ) Si. While the bulk and perimeter generation current increases for increasing density of oxygen-precipitation induced extended defects, no change is observed...
A study is made of fluorine implantation into polysilicon for application in npn polysilicon emitter bipolar transistors. Polysilicon sheet resistance measurements are used to monitor the effect of the fluorine on the epitaxial realignment of the polysilicon, and this is correlated with device electrical results. It is shown that the fluorine causes epitaxial realignment of the polysilicon to occur...
This paper discusses the data retention properties of ONO interpolysilicon dielectrics. Several low thermal budget recipes of bottom oxide are compared to improve FLASH E2PROM cells shrinkage toward 64 Mb generation. Best results are obtained for LPCVD bottom oxide against chlorinated and dry ones.
We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm??3 along with strong surface segregation.
TiN films were grown by CVD from the reaction of tetrakis-diethylamino-titanium (TDEAT) with ammonia and tetrakis-dimethylamino-titanium (TDMAT) with ammonia. Deposited films were characterized by growth rate, resistivity, surface morphology and step-coverage over contact structures. Films deposited without ammonia flow were unstable in atmosphere and Auger analysis showed higher relative carbon content...
A new experimental setup was developed to study the clustering process of arsenic in silicon. It is based on the use of homogeneously doped SOI material which simplified the interpretation of the electrical measurements. Using this experimental setup, the inactivation of arsenic was investigated for chemical concentrations from 2??1020 cm??3 to 1??1021 cm??3 in the temperature range between 700 ??C...
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