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We describe our simulation framework for coupled electro-thermo-mechanical (ETM) analysis of miniaturized transducers and electronic devices. The package is tailored to the specific requirements of micro-electro-mechanical structure design. It achieves high computational accuracy and performance on engineering workstations through the use of an automatic mesh adaptation algorithm [1]. A zone-coupling...
The effect of rapid thermal anneal cycles typical of those required for source/drain implant activation on flatband voltage, interface state density, and dielectric strength in MOS capacitors with heavily in-situ boron doped polysilicon gates over thin thermal oxide is studied. Anneal cycles of up to 1050??C, 10 s should be acceptable for use of in-situ doped p+ gates in a CMOS process.
Fabrication of self-aligned silicide of CoSi2 on source/drain areas in a tungsten polycide (WSix/poly) process is demonstrated. CoSi2 is formed by RTA under conditions identical to the poly gate process, i.e. no extra capping layer is required on top of the WSix gate. The materials interactions of WSix with Co films during RTA and subsequent wet etching steps have been studied. Transistor results...
Accurate simulation of topography processes requires three-dimensional models and algorithms for wafer topography evaluation. In this paper a model for three-dimensional physical vapor deposition is presented which converts information about the angular flux distribution of incident particles into local growth rates along the exposed surface. This model is coupled with an algorithm for general three-dimensional...
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