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The volume degradation features of very thin tunnel oxide layers will be deeply analyzed and the validity of the following issues will be demonstrated quantitatively: i) only negative charge builds-up in the bulk of the insulator layer, ii) for a given oxide thickness and gate stress polarity breakdown occurs as soon as the negative trapped bulk oxide charge density attains a critical value, iii)...
The processing and characterisation of 6H-SiC PiN diodes is described. Comparisons are made between diodes with different surface passivations, and numerical simulation is used to better understand their behaviour. A ``wet'' thermal oxide with a deposited silicon nitride layer on top is found to be the best surface passivation. This permits on-wafer high-voltage measurements to be made in air, possibly...
Strong axial, piezoelectric fields are present in III-v quantum wells grown pseudomorphically strained on ≪111≫ axes. Their associated effects can be exploited to improve the performance of a number of optoelectronic devices.
We present experimental results of hot electron noise in Si doped n+nn+ AlxGa1-xAs structures with x=0.15, 0.2 and 0.25 using H.F.pulsed noise measurements. Noise temperature and longitudinal diffusion coefficient as functions of field strength are compared with Si doped GaAs data. Results are discussed from the point of view of electron scattering mechanisms. The possibility of self-heating effects...
The anomalous off current (Ioff) in poly-Si thin film transistors (TFTs) is one of the major problems preventing the use of these devices in active matrix liquid crystal displays. While previous investigations have focused on the temperature range above 300K, in this study we analyse the behaviour of Ioff over a wider range of temperatures, namely 180 to 400 K. Our results provide for the first time...
We present a study of vertically-grown Si ultra-short FET's based on a new implementation of the Cellular Automata simulation. The probabilistic scattering rates for the electric field have been replaced in the cellular automaton by a new deterministic scattering rule in a fully three-dimensional momentum-discretization, leading to a significant suppression of statistical errors. We have also developed...
Separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs) are the preferred candidates in long haul fibre optical telecommunication systems. In this paper, we report a simple, fast, accurate, and non-destructive technique for extracting of two critical device parameter - multiplication layer thickness Xd and charge sheet density ??, using punchthrough...
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