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The volume degradation features of very thin tunnel oxide layers will be deeply analyzed and the validity of the following issues will be demonstrated quantitatively: i) only negative charge builds-up in the bulk of the insulator layer, ii) for a given oxide thickness and gate stress polarity breakdown occurs as soon as the negative trapped bulk oxide charge density attains a critical value, iii)...
We report a detailed experimental analysis of both electron and hole Real Space Transfer occurring in InAlAs/InGaAs heterostructure devices grown on InP. At high drain-source voltages electrons are heated and holes are created by impact ionization. Both electrons and holes contribute to the gate current whereas the relative size of these contribution depends on the magnitude and polarity of the bias...
This paper describes methods of improving thickness uniformity for ultra-thin oxynitride dielectrics fabricated using nitrous oxide (N2O). In addition the electrical characterisation of these dielectrics is presented in order to ascertain the effect that the different fabrication processes have on the electrical properties.
The most recent issues about the low frequency noise in CMOS devices are presented. The various approaches such as the carrier number and the Hooge mobility fluctuations schemes currently used for the interpretation of the noise sources are discussed. The main physical properties which characterize the Random Telegraph Signals in small area MOS transistors are reviewed. The impact of the miniaturization...
In this work, we present a new method to determine the Dito constant, which is involved in a mobility reduction law. From different types of static aging measurements, the channel length variation is calculated, using the correct value of Dito. It is thus demonstrated that negative charge trapping tends to reduce the channel length whereas positive charge trapping increases this length.
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