The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The use of numerical simulation has become an invaluable tool in the competitive environment of technology and device development. Effective process and device simulation can reduce the time and cost associated with new product development and can provide a means for rapid assessment of new design concepts. The scaling of voltages and geometries in flash EEPROM has highlighted the need for models...
The temperature dependence of the Fowler-Nordheim tunnel current in a MOS structure is investigated both theoretically and experimentally between 25?? C and 400??C. The F-N current is found to increase substantially with temperature. The existence of effective pre-exponential and exponential F-N coefficients up to 400??C is demonstrated and validated by numerical simulations based on the general F-N...
Constructive Solid Geometry (CSG) is a solid modeling technique widely used for the design of semiconductor devices. With the simulation domain subdivision algorithm presented in this paper, the minimal number of solid modeling operations is required in order to build a three-dimensional (3D) device structure. The algorithm is based on a drawing method which combines information on photolithographic...
In this presentation the NEWSSTAND network is outlined which has been established as a part of the Human Capital and Mobility Programme funded by the EU. Within NEWSSTAND, major semiconductor research centers and companies are active. The network partners combine their individual expertize in order to promote the progress in the field of semiconductor process and device modeling and simulation. Network...
A methodology to include cost and yield estimation in a comprehensive TCAD model of semiconductor processing is presented. The underlying idea is that a process recipe used to drive TCAD simulators contains a complete set of information about the process. If it is combined with empirical equipment data, a set of models can be constructed to describe cost as a function of the process recipe and equipment...
An analytical DMOS model for circuit simulation based on a subcircuit approach is extended for a variable number of cells. The subcircuit itself consists of a minimal number of elements whose models are physically based and optimized for the special DMOS structure. The DC-description is continous (smooth transitions between the different operating regions of the device), the AC-description is charge...
A new method for the three-dimensional (3-D) simulation of LPCVD using a modified string algorithm combined with a redistribution model is presented. Simulation results for rectangular holes are shown. The step coverage predicted by 3-D simulations is compared to step coverages from 2-D simulations. It is shown that the considerable differences observed require the use of 3-D algorithms for the simulation...
The formation of oxygen induced defects/dislocation complexes, determining the internal gettering of unwanted metallic contaminants in Cz-silicon is studied during LO-HI, and multi-step CMOS type thermal anneals, The simulation model, which is based on a combination of rate equations and Fokker-Planck equations, describes oxygen precipitation and stacking fault formation simultaneously. The simulation...
New experiments on short-time diffusion of gold in silicon are presented. Diffusion of gold in silicon is investigated in the temperature range of 900??C to 1100??C. The values of the barrier energies for both the gold-point defect reactions and the Frenkel pair reaction have been determined as EAu/I = 0.482eV, EAuI/V= 0.971eV, and EI/V = 0.30eV.
Accurate simulation of topography processes requires three-dimensional models and algorithms for wafer topography evaluation. In this paper a model for three-dimensional physical vapor deposition is presented which converts information about the angular flux distribution of incident particles into local growth rates along the exposed surface. This model is coupled with an algorithm for general three-dimensional...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.