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This paper presents a method that can be used as part of a Design For Manufacturability (DFM) procedure. The equations that form the response surfaces are used to obtain distribution parameters and this data is used to create response surfaces of the distributions. This then enables the process designer to choose the optimum processing conditions and set realistic specifications on the process parameters.
Analytical calculations of thermal-and avalanche snapback points are given to predict when thermal runaway in a bipolar transistor is initiated. These snapback points are used to construct the Safe Operating Area of the transistor in the case of a current and a voltage controlled base.
Three time-to-failure (TTF) electromigration reliability models (based on different assumptions) used in the analysis of experimental data to determine interconnect reliability are compared using a new computer model for simulating failure in polycrystalline thin film conductors. The inclusion of backflux in the model and the use of ambient or conductor temperature on the extracted failure parameters...
A novel approach for measurement of the minority carrier diffusion length based on 2D non-stationary surface photovoltage theory is developed. It is shown that the spatial resolution is limited by the most value of light beam diameter and diffusion length. It does not depend on the size of a capacitively coupled electrode. A wafer-scale and rapid mapping with high definition (less than 2 min for 7800...
A new SPICE model of the bipolar transistor including avalanche multiplication and current crowding effects is described. Impact-ionization phenomena are modelled refering to a physical description of impact-ionization coefficients, rather than to semi-empirical laws, as in previous models. We show that an accurate analysis of multiplication effects can be obtained only if the influence of impact-ionization...
We present a study of vertically-grown Si ultra-short FET's based on a new implementation of the Cellular Automata simulation. The probabilistic scattering rates for the electric field have been replaced in the cellular automaton by a new deterministic scattering rule in a fully three-dimensional momentum-discretization, leading to a significant suppression of statistical errors. We have also developed...
In small Si bipolar transistors (BJTs) the sidewall effects play an important role. Extensive device simulations on Si/SiGe/Si heterojunction bipolar transistors (HBTs) and Si BJTs show that in the HBTs the sidewall current injection is strongly suppressed. Consequently, the current gain in the HBT keeps constant down to a much smaller emitter width (We ?? 0.20 ??m) than for a conventional Si transistor...
The formation of oxygen induced defects/dislocation complexes, determining the internal gettering of unwanted metallic contaminants in Cz-silicon is studied during LO-HI, and multi-step CMOS type thermal anneals, The simulation model, which is based on a combination of rate equations and Fokker-Planck equations, describes oxygen precipitation and stacking fault formation simultaneously. The simulation...
A new experimental setup was developed to study the clustering process of arsenic in silicon. It is based on the use of homogeneously doped SOI material which simplified the interpretation of the electrical measurements. Using this experimental setup, the inactivation of arsenic was investigated for chemical concentrations from 2??1020 cm??3 to 1??1021 cm??3 in the temperature range between 700 ??C...
A technology for producing high-speed MMICs utilizing InAlAs/InGaAs HEMTs has been established at our laboratory. In order to simulate circuits that exploit the nonlinear behaviour of the transistors, a large signal model of these HEMTs has been developed that describes device characteristics both in ohmic and saturation regime.
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