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A lattice-matched In0.53Al0.22Ga0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm2, along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base...
A process is described for fabricating high performance InP HEMT devices and circuits, using relatively straightforward technologies. 0.25 ??m devices yield a transit frequency of 150 GHz, which is the highest reported value for this gate-length. The process is suitable for fabricating prototype microwave and millimetre-wave circuits.
A novel high gate barrier (HGB) AlInAs/GaInAs/InP HEMT structure is proposed, which overcomes gate leakage current problems due to limited Schottky barrier height in common HEMT design. Gate leakage is a major contribution to low-frequency noise besides deep trap re-charging (1). The crucial point in the novel HEMT design is the insertion of an additional shallow p+-?? doped plane below the gate contact...
In this paper, we investigate low frequency noise in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs). In the APDs studied, we find that the dark current multiplication shot noise is proportional to M?? with ?? from 2.75 to 2.95. Flicker noise is observed in some APDs and it is believed to be due to leakage current sources.
Separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs) are the preferred candidates in long haul fibre optical telecommunication systems. In this paper, we report a simple, fast, accurate, and non-destructive technique for extracting of two critical device parameter - multiplication layer thickness Xd and charge sheet density ??, using punchthrough...
A method for removing damage imposed upon substrates during Reactive Ion Etching (RIE) is described. The technique involves using a finishing low power etch after the main etch. It is seen that there is a limit to the amount of carbon dioxide that may be used in etchant mixtures, if damage to the substrate is to be avoided. An oxygen plasma clean may be used to remove organic residue after RIE. However,...
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