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Modulation-doped GaAs/In0.25Ga0.75As/Al0.3Ga0.7 As HEMT structures were grown using different MBE-growth temperatures and In0.25Ga0.75As channel thicknesses. Drain current DLTS measurements performed on these samples using a Fourier-Transform technique show that the concentrations of both bulk and interface traps depend greatly on growth temperature. In addition, a broadening of one of the DLTS peaks...
We show that a remarkable threshold shift ??Vp and an increase in the saturation current ??Ids can be observed in AlGaAs/InGaAs PM-HEMT's submitted to high temperature (100??C - 200 ??C) storage or hot-electron stresses for relatively short times (about 20 hours). An increase in Ids up to 40% has been observed. The increase is not permanent and can be recovered by a room or low temperature storage...
We report a detailed experimental analysis of both electron and hole Real Space Transfer occurring in InAlAs/InGaAs heterostructure devices grown on InP. At high drain-source voltages electrons are heated and holes are created by impact ionization. Both electrons and holes contribute to the gate current whereas the relative size of these contribution depends on the magnitude and polarity of the bias...
A process is described for fabricating high performance InP HEMT devices and circuits, using relatively straightforward technologies. 0.25 ??m devices yield a transit frequency of 150 GHz, which is the highest reported value for this gate-length. The process is suitable for fabricating prototype microwave and millimetre-wave circuits.
A novel high gate barrier (HGB) AlInAs/GaInAs/InP HEMT structure is proposed, which overcomes gate leakage current problems due to limited Schottky barrier height in common HEMT design. Gate leakage is a major contribution to low-frequency noise besides deep trap re-charging (1). The crucial point in the novel HEMT design is the insertion of an additional shallow p+-?? doped plane below the gate contact...
A technology for producing high-speed MMICs utilizing InAlAs/InGaAs HEMTs has been established at our laboratory. In order to simulate circuits that exploit the nonlinear behaviour of the transistors, a large signal model of these HEMTs has been developed that describes device characteristics both in ohmic and saturation regime.
AlInAs/InGaAs HEMTs with different gate lengths, ranging from 0.2 to 1.0 ??m, and on different layer structures were fabricated. The DC- and HF-characteristics were systematically investigated before and after the passivation with PECVD Si3N4. The passivation resulted in an increase in parasitics such as the feedback capacitance (Cgd) and the drain delay time, leading to a slight degradation of the...
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