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The influence of high-concentration phosphorus diffusion on an antimony marker layer separated spatially by 4??m epitaxially deposited silicon is described. The phosphorus was implanted into a deposited polysilicon layer to eliminate the effects of implantation enhanced diffusion and point-defect generation due to phosphorus precipitation on the diffusion of the antimony marker layer. It was found...
We propose here a back junction SiGe PMOS structure having a cross section of Poly/SiO2/Si-cap/SiGe/n-epi/p-substrate. The electrical coupling between the front gate and the back p-substrate/n-epi junction reduces the vertical field, thus improving the hole confinement and the SiGe channel mobility, resulting in an improved effective channel mobility. Numerical simulation shows that the back junction...
We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm??3 along with strong surface segregation.
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