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This paper shows that a rigorous methodology, using DoE and calibrated simulators, in order to optimise complex technologies can lead to a real improvement of the optimal point found by a classical go and fro experimental approach; the two approaches are compared in terms of performances and in terms of available information to estimate the manufacturability of a process.
SiGe heterojunction bipolar transistors (HBTs) with very thin n+ hydrogenated amorphous Si (α-Si:H) emitters and various doping and Ge distribution profiles in the bases are reported. An analytical model defining the leverage of the structures in terms of current gain and high Early voltage is presented and verified experimentally. Devices having a base doping concentration of 1??1019cm-3, a base...
This paper presents a method that can be used as part of a Design For Manufacturability (DFM) procedure. The equations that form the response surfaces are used to obtain distribution parameters and this data is used to create response surfaces of the distributions. This then enables the process designer to choose the optimum processing conditions and set realistic specifications on the process parameters.
This work introduces a comprehensive analytic model of the sputtering mechanism present in IBE and RIE processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verifications for GaAs etching show a good agreement for IBE. In the case of RIE, the non perfect agreement is explained by the influence of effects such as flow rate and temperature not taken...
Three time-to-failure (TTF) electromigration reliability models (based on different assumptions) used in the analysis of experimental data to determine interconnect reliability are compared using a new computer model for simulating failure in polycrystalline thin film conductors. The inclusion of backflux in the model and the use of ambient or conductor temperature on the extracted failure parameters...
A new SPICE model of the bipolar transistor including avalanche multiplication and current crowding effects is described. Impact-ionization phenomena are modelled refering to a physical description of impact-ionization coefficients, rather than to semi-empirical laws, as in previous models. We show that an accurate analysis of multiplication effects can be obtained only if the influence of impact-ionization...
In this work we give a thermal analytical model that is suitable for taking into account the lattice temperature in parameters extraction. This thermal model is used to estimate the self heating effects on future SOI devices operation.
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