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Strong axial, piezoelectric fields are present in III-v quantum wells grown pseudomorphically strained on ≪111≫ axes. Their associated effects can be exploited to improve the performance of a number of optoelectronic devices.
In this paper, we investigate low frequency noise in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs). In the APDs studied, we find that the dark current multiplication shot noise is proportional to M?? with ?? from 2.75 to 2.95. Flicker noise is observed in some APDs and it is believed to be due to leakage current sources.
Separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs) are the preferred candidates in long haul fibre optical telecommunication systems. In this paper, we report a simple, fast, accurate, and non-destructive technique for extracting of two critical device parameter - multiplication layer thickness Xd and charge sheet density ??, using punchthrough...
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