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This paper presents a new approach to MOSFET modeling using a state-space technique. The model is based on discrete elements whose values are extracted from measurements, datasheet parameters and SPICE?? equations. The switching characteristics of the component are strongly determined by the gate-drain capacitance (CGD). With help of thorough impedance measurements, characterization of this capacitance...
An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron ?? Qg over its silicon counterpart.
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