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Parallel dimming for reducing the intensity of high power light-emitting diode (HP-LED) is an effective way of achieving high contrast ratio and wide dimming range. However the scheme has limitation due to response of control loop and higher power dissipation due to losses during turn-off period. Therefore shorting-inductor approach is proposed in this paper which is capable of achieving improvement...
This paper is concerned with some experimental results and practical evaluations of a three-level phase shifted ZVS-PWM DC-DC converter with neutral point clamping diodes and flying capacitor for a variety of gas metal arc welding machines. This new DC-DC converter suitable for high power applications is implemented by modifying the high-frequency-linked half bridge soft switching PWM DC-DC converter...
Flyback converters are widely used in consumer electronic products and other applications that require low cost isolated power supply with less than or around 200W output power. Transition Mode is one method to control the Flyback converters. This control method has the advantage of soft-switching turn-on, which greatly reduces the turn-on loss. This paper discusses the design of a CMOS Transition...
In this paper, a novel converter, named negative-output KY buck-boost converter, is presented herein, which has no bilinear characteristics. First of all, the basic operating principles of the proposed converter are illustrated in detail, and secondly some simulated and experimental results are provided to verify its effectiveness.
A novel converter, named negative-output KY boost converter, is presented here in, which needs one additional capacitor and one additional diode as compared to the boost converter. In the following, the basic operating principles of the proposed converter are illustrated in detail, together with some simulated and experimental results to verify its effectiveness.
Single-phase topology of the bi-directional a.c. chopper with power MOSFET embedded discrete component four-quadrant switch (4QSW) realizations that operate in a high frequency chopping mode is used to implement the symmetrical multipulse modulation (SMM) technique that provides ac power control. The technique involves generation of several equidistant pulses per half cycle (M) and control of their...
The paper proposes a generalized circuit configuration of a new multilevel current-source inverter (CSI) with no-isolated switching devices. In this new multilevel inverter topology, all of the power-switches in the inverter are connected on a common-potential level. Hence, all of the power switches only need a single gate drive power supply without using isolated power supplies or conventional bootstrap...
This paper presents a new approach to MOSFET modeling using a state-space technique. The model is based on discrete elements whose values are extracted from measurements, datasheet parameters and SPICE?? equations. The switching characteristics of the component are strongly determined by the gate-drain capacitance (CGD). With help of thorough impedance measurements, characterization of this capacitance...
In the medical healthcare system, wireless body area network (WBAN) is used to monitor the fall event of a patient by sensing his/her body state orientation (stand or fall posture). However, for a conventional WBAN, the only way to communicate with the doctors' computers or hospital's servers is through the local gateway. Hence, the reliability of the WBAN is greatly dependent on the life span of...
A novel voltage bucking/boosting converter is presented herein, which has negative output and no bilinear characteristics. First of all, the basic operating principles of the proposed converter are illustrated in detail, and secondly some simulated and experimental results are provided to demonstrate its effectiveness.
An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron ?? Qg over its silicon counterpart.
The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable...
After studying the development of BDCM sensorless control with six-step square-wave PWM (SWPWM) and six-step back-EMF detecting scheme (BEDS), the BDCM sensorless control with twelve-step SWPWM and twelve-step BEDS had been proposed and implemented in this paper. The proposed twelve-step BEDS generates the twelve commutation instants from six back-EMF zero-crossings during each cycle where the six-step...
An enabling superjunction device technology, which is fully integrated on the partial silicon on insulator (PSOI) platform using the bulk silicon substrate, is proposed and fabricated. The proposed technology has the potential to eliminate the substrate assisted depletion. It enables the implementation of lateral superjunction power MOSFET (SJ LDMOS) on bulk silicon substrate without sacrificing its...
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