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This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/junction-barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on...
This paper describes the determination of interelectrode capacitances of a fast switching high voltage super junction transistor from dynamic measurements in a commutation circuit with a SiC Schottky diode. The gained capacitance voltage characteristics reflect the transistor's effective parasitic capacitances during switching for the given application. Thus, these characteristics are used for the...
We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented. These simulations are performed on SENTAURUS TCAD. Then, technologic steps needed to carry out the experimental device are described. From C-V measurements, the B-acceptors concentration and the barrier height extracted were NA ~ 1,2.1017cm-...
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