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This paper presents fast and simple methods to calculate IGBT and diode switching and conduction losses in power electronic system simulation. With the models derived in this paper, these losses can be calculated although the device data is incomplete. A novel approach to calculate diode reverse recovery losses is included. Furthermore, the correlation between stray inductance and switching energy...
High efficiency is one of the major requirements of today's modern power architectures. To achieve the needs of modern power topologies, advanced power device designs are essential. In the field of low-voltage devices, covering a range up to 250 V, a significant reduction of the MOSFET on-resistance is achieved by employing the compensation principle based on field-plates. Such devices do require...
We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented. These simulations are performed on SENTAURUS TCAD. Then, technologic steps needed to carry out the experimental device are described. From C-V measurements, the B-acceptors concentration and the barrier height extracted were NA ~ 1,2.1017cm-...
In recent years a new device concept appeared in the IGBT technology. It is a structure between a PT and an NPT device, with a low-doped emitter, where the fundamental role is played by the field-stop layer. In this paper we fixed some considerations about a proper design of this layer. Some simulated and real electrical characteristics of a trench-gate emitter-implanted IGBT will be shown and correlated...
This paper presents a 30V range `Field Balanced' Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Qgd of 1.0 nC mm-2for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 mOmega nC to around 6.40 mOmega nC. From this investigation, it has been demonstrated that the `Field Balanced' on a a Split-Gate...
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