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This paper presents fast and simple methods to calculate IGBT and diode switching and conduction losses in power electronic system simulation. With the models derived in this paper, these losses can be calculated although the device data is incomplete. A novel approach to calculate diode reverse recovery losses is included. Furthermore, the correlation between stray inductance and switching energy...
During operation steep lateral temperature gradients evolve in IGBT power semiconductor chips. The influence of these lateral gradients on the measurement of the virtual junction temperature by means of the widely used VCE(T)-method was investigated. In particular we address the question, how the obtained single temperature value is connected to the temperature distribution of the chip. A combination...
In this paper, physics-based IGBT and diode models are used to simulate two 3-phase VSI systems using different power modules in SABER. The device parameters for two standard SEMIKRON power modules, the 1200 V/75 A single chip module and the 1200 V/300 A multi-chip module, are extracted following parameterization procedure. The effects of three typical degradations are considered, including solder...
This paper presents an educational tool that enables exploring key aspects on semiconductor theory and power circuit analysis. With this tool it is possible to examine with accuracy the influence of device parameters and circuit parameters on circuit dynamic behavior, analyzing switching waveforms and typical switching parameters. The tool invokes an electrical circuit simulator (IsSpice) in order...
In recent years a new device concept appeared in the IGBT technology. It is a structure between a PT and an NPT device, with a low-doped emitter, where the fundamental role is played by the field-stop layer. In this paper we fixed some considerations about a proper design of this layer. Some simulated and real electrical characteristics of a trench-gate emitter-implanted IGBT will be shown and correlated...
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